Comparative research on reflection-mode GaAs photocathode with graded AlxGa1−xAs buffer layer

Chen, Liang; Shen, Yonghang; Zhang, Shuqin; Qian, Yunsheng; Xu, Sunan

doi:10.1016/j.optcom.2015.06.053

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…In this paper, a ternary semiconductor is introduced in an Au/Ag-based SPR biosensor. The aluminum gallium arsenide, Al x Ga 1−x As, 70% Al, with large indirect band gap is often used in electronics and optoelectronics [28,29]. In the experiments Al x Ga 1−x As, 70% Al thin film was prepared by different methods onto several substrates: by pulsed laser deposition onto Si substrates [30] and by metal organic chemical vapor deposition [31].…”

Section: Introductionmentioning

confidence: 99%

ENHANCEMENT IN SENSITIVITY OF A SURFACE PLASMON RESONANCE SENSOR WITH AlxGa1-xAs, 70% Al

Guerinik¹,

Tayeboun²

2020

PIER Letters

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The sensitivities of an aluminum gallium arsenide Al 0.7 Ga 0.3 As-based surface plasmon resonance (SPR) sensor with gold (Au) and silver (Ag) layers are numerically analyzed and compared at 633 nm wavelength for different thicknesses of the Al 0.7 Ga 0.3 As. As the thickness of Al 0.7 Ga 0.3 As increases, the sensitivity of aluminum gallium arsenide Al 0.7 Ga 0.3 As with a specific metal (Au or Ag) layer increases. Our calculations show that the sensitivities of the proposed sensors are 80.55% (Au film) and 34.74% (Ag film) higher than the conventional Au and Ag sensors successively. The aluminum gallium arsenide Al 0.7 Ga 0.3 As-based SPR sensor has the advantages of high angular sensitivity, narrow resonance widths, and low minimum reflectance, making it a much better choice for biosensing applications.

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Section: Introductionmentioning

confidence: 99%

ENHANCEMENT IN SENSITIVITY OF A SURFACE PLASMON RESONANCE SENSOR WITH AlxGa1-xAs, 70% Al

Guerinik¹,

Tayeboun²

2020

PIER Letters

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“…III‐nitride has wide bandgap adjustment from deep UV to near‐infrared, making AlGaN photocathodes an excellent choice . Initially, in order to solve the lattice mismatch problem between the AlGaN emission layer and the AlN buffer layer, which causes the photoelectrons to recombine and shortens the electron lifetime, a buffer layer structure with graded Al composition is proposed . Then, the graded compositional Al x Ga 1−x N structure classifies the bandgap of the photocathode and generates a built‐in electric field inside the material, which can reduce the surface recombination loss and promote the photoelectrons to the surface of the emissive layer for the enhancement of quantum efficiency …”

Section: Introductionmentioning

confidence: 99%

The effective light‐harvesting performance of graded compositional Al _x Ga _1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation

Liu

Zhangyang

et al. 2020

Int J Energy Res

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A graded compositional Al x Ga 1−x N nanomaterial with a built-in electric field has been proposed to improve the quantum efficiency of the negative electronic affinity photocathode. When the graded compositional Al x Ga 1−x N nano-cone array is applied to the ultraviolet (UV) detector, it is necessary to improve the effective light absorption, which is high absorption in the UV short-wavelength and high sensitivity in the threshold wavelength. Therefore, the light absorption of nano-cone arrays with different feature sizes and geometrical properties is accurately calculated innovatively based on the finite-difference time-domain method. Studies show that a non-close-packed six-sided pyramid structure with a fill factor of 42.44% and a height of 1000 nm has an absorption spectrum that better satisfies the response characteristics of the UV detector. Surface reflection depends to a large extent on the transformation of the angle of incidence. The optical absorption properties of the graded compositional Al x Ga 1−x N nano-cone array provide flexibility and reference value for the improvement of the absorption coefficient and other parameters in the actual quantum efficiency experiment of the UV photocathode with built-in electric field, which can realize the highest sensitivity of various designed UV detector optical system.

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Characteristic research of uniform-doping and exponential-doping Ga1-xAlxAs/GaAs photocathode with femtosecond laser illumination

Zhu

Chen

Qian

et al. 2019

Optik

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Comparative research on reflection-mode GaAs photocathode with graded AlxGa1−xAs buffer layer

Cited by 3 publications

References 21 publications

ENHANCEMENT IN SENSITIVITY OF A SURFACE PLASMON RESONANCE SENSOR WITH Al<sub>x</sub>Ga<sub>1-x</sub>As, 70% Al

ENHANCEMENT IN SENSITIVITY OF A SURFACE PLASMON RESONANCE SENSOR WITH Al<sub>x</sub>Ga<sub>1-x</sub>As, 70% Al

The effective light‐harvesting performance of graded compositional Al _x Ga _1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation

Characteristic research of uniform-doping and exponential-doping Ga1-xAlxAs/GaAs photocathode with femtosecond laser illumination

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Comparative research on reflection-mode GaAs photocathode with graded AlxGa1−xAs buffer layer

Cited by 3 publications

References 21 publications

ENHANCEMENT IN SENSITIVITY OF A SURFACE PLASMON RESONANCE SENSOR WITH Al<sub>x</sub>Ga<sub>1-x</sub>As, 70% Al

ENHANCEMENT IN SENSITIVITY OF A SURFACE PLASMON RESONANCE SENSOR WITH Al<sub>x</sub>Ga<sub>1-x</sub>As, 70% Al

The effective light‐harvesting performance of graded compositional Al x Ga 1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation

Characteristic research of uniform-doping and exponential-doping Ga1-xAlxAs/GaAs photocathode with femtosecond laser illumination

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The effective light‐harvesting performance of graded compositional Al _x Ga _1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation