Comparative Passivation of Si(100) by H2 and D2 Atmospheres under Simultaneous Xe+ Bombardment: An X-ray Photoelectron Spectroscopy Analysis
V. G. Antunes,
M. J. M. Jimenez,
F. Cemin
et al.
Abstract:This study presents a comparison of H 2 and D 2 passivation on Si(100) under simultaneous Xe + ion bombardment. The impact of Xe + ions causes significant damage to the substrate surface, leading to an increase in H 2 (D 2 ) retention as Si−H (Si−D) bonds. The ion bombardment conditions are precisely controlled using a Kaufman ion gun. The atomic concentrations on the surface of the sample were investigated by quasi-in situ X-ray photoelectron spectroscopy. A simple methodology is employed to estimate the H (D… Show more
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