Comparative optical characterization of various Nd3+:YVO4 single crystals

Ermeneux, F. S.; Goutaudier, C.; Moncorgé, R.; Cohen-Adad, M.Th.; Bettinelli, Marco; Cavalli, Enrico

doi:10.1016/s0925-3467(98)00071-8

Cited by 32 publications

(20 citation statements)

References 28 publications

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“…The yellow color was also observed for Nd 3+ :YVO 4 , and was found to be particularly marked in the case of crystals obtained using the flux growth technique [1].…”

Section: -mentioning

confidence: 68%

“…It is ideal for optical polarizing components such as fiber optical isolators, beam displacers and circulators. Nd 3+ :YVO 4 is one of the most effective and advanced crystals for diode pumped lasers [1][2][3]. Yttrium vanadate crystals doped with Ho 3+ find practical applications due to their long lived luminescence and good optical coherence properties which can possibly make them useful for optical data storage and processing, for quantum information and computing [4] and as frequency standards.…”

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confidence: 99%

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Photoluminescence of Ho³⁺:YVO₄ crystals

Poloşan

Bettinelli

Tsuboi

2007

Phys. Status Solidi (c)

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Emission spectra of Ho 3+ -doped YVO 4 crystals are studied in the visible and infrared spectral regions. Besides the emission bands at 544 nm and at about 1950 and 2017 nm due to Ho 3+ , we observed a broad emission band at 610 nm at low temperatures like 15 K in the highly doped crystals with the Ho 3+ concentrations of more than 0.5 mol %. The excitation band for this broad emission is located at 390 nm which is near the edge of band gap of the crystal. It is suggested that the 610 nm band is attributed to defects related to oxygen vacancies around V 4+ ions. 3+ find practical applications due to their long lived luminescence and good optical coherence properties which can possibly make them useful for optical data storage and processing, for quantum information and computing [4] and as frequency standards. A special attention was paid in the case of Ho 3+ :YVO 4 crystals to the very long lifetime fluorescence of the 2017 nm emission, which is around 3 ms [5], so that this material can be used as a very efficient and high-energy laser device like in the case of Ho 3+ :YAG crystals [6]. A very interesting application of Ho 3+ :YVO 4 could be in the field of quantum information processing due to the relatively long coherence time of some optical transitions [7].Although a considerable amount of study has been made for Ho 3+ :YVO 4 crystals, several aspects of the optical spectroscopy are still to be investigated, especially concerning the near-infrared emission, and the properties of the defects present in the crystals grown using high temperature techniques. For these reasons, we found it interesting to expand the previous spectroscopic investigations of this important luminescent crystal.

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“…The yellow color was also observed for Nd 3+ :YVO 4 , and was found to be particularly marked in the case of crystals obtained using the flux growth technique [1].…”

Section: -mentioning

confidence: 68%

mentioning

confidence: 99%

Photoluminescence of Ho³⁺:YVO₄ crystals

Poloşan

Bettinelli

Tsuboi

2007

Phys. Status Solidi (c)

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“…Take sample 2# as an example, it can be found that under the same excitation condition, PL relative intensity in as-implanted sample is only about 1/3 of that in virgin Nd:YVO 4 . The reason is related to the implant-induced defects and damaged lattice structure [18] at near surface region. The former would degrade the excitation efficiency of PL due to surface scattering and absorption; the later would result in a low optical activation of RE ions.…”

Section: B Lattice Damage In Annealed Samplesmentioning

confidence: 99%

The Damage Analysis of Nd:YVO4 Crystal Implanted by He+ Ions at Low Energy

Ming

et al. 2012

2012 Symposium on Photonics and Optoelectronics

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We report the damage properties of the He + ions implanted Nd:YVO 4 crystal. Implantation was carried out at room temperature by He + ions at the doses of 1×10 16 , 2×10 16 , and 4×10 16 ions/cm 2 with the energy of 200keV. The depth of the damage region is about 0.85μm beneath the surface. Rutherford backscattering spectrometry (RBS)/channeling technique was used to investigate the damage profile of ions implanted samples. Low atomic displacement ratio in as-implanted samples indicates a high irradiative resistance of YVO 4 crystal and the dynamic annealing effect of He + ions in the implantation process. Post-implant annealing was performed for all the samples at 200 o C and 300 o C for an hour, respectively. The height and width of damage peak decreased somewhat after annealing at 200 o C. Repairing and re-crystallization of damaged lattice was achieved after annealing at 300 o C. Photoluminescence of ion-implanted samples were measured to investigate effect of implantation on fluorescence properties of Nd 3+ . The damage on sample surface was analyzed by optical microscopy (OM) and atomic force microscopy (AFM).

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“…Currently, Nd:YV04 crystal is one of the best gain medium can be implemented in a DPSSL which was optically studied by O'Connor in 1966 [3]. Compared to Nd:YAG, Nd:YV04 has larger effective stimulated cross-section, wider absorption bandwidth and polarized output.…”

Section: Introductionmentioning

confidence: 99%