Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

Wu, Yahui; Tsai, Jung‐Hui; Chiang, Te‐Kuang; Wang, Fumin

doi:10.1134/s1063782615100279

Cited by 3 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is due to the higher potential barrier of the valence band seen through the holes at the emitter-base heterojunction. With significant mobility, these are interesting elements for power and microelectronic applications [15]. The carrier mobility in the semiconductor determines the operating frequencies and the gain of the device.…”

Section: Methodsmentioning

confidence: 99%

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Nadjet¹,

Ghaffour²

2020

IJECE

View full text Add to dashboard Cite

The variation and stability of HBT's parameters at different temperatures are important for utilizing these devices in high-power integrated circuits. The temperature dependence of the DC current gain of bipolar transistors, as a key device parameter, has been extensively investigated. A major issue of the power HBT's is that the current gain is decreased with junction temperature due to self-heating effect.Hence, how to stabilize the DC current gain and RF performances is important issue to develop the power HBTs. This work describes the DC and high-frequency temperature dependence of InGaP/GaAs HBT's. The substrate temperature (T) was varied from 25 to 150°C. The static and dynamic performances of the HBT are degraded at high temperature, due to the reduced of carrier mobility with increasing temperature. The current gain (β) decreases at high temperatures; from 140 to 127 at 25 to 150°C, while the decreases in the peak Ft and Fmax are observed from about 110 GHz to 68 GHz and from 165 GHz to 53 GHz respectively in the temperature range of 25 to 150°C.

show abstract

Section: Methodsmentioning

confidence: 99%

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Nadjet¹,

Ghaffour²

2020

IJECE

View full text Add to dashboard Cite

show abstract

“…The heterojunction's broad process tolerance ensures stable performance across different fabrication conditions. Coupled with high yields and a manufacturing process, these attributes facilitate large-scale production and applications, positioning InGaP/GaAs heterojunctions as a formidable choice in advanced semiconductor technologies [16][17][18][19][20][21][22][23][24][25][26]. The integration of large-size epitaxial wafers into semiconductor manufacturing significantly enhances production efficiency and material usage, thereby reducing the cost per unit area.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity

Yang,

Guo,

Zhao

et al. 2024

Electronics

View full text Add to dashboard Cite

In this study, we conduct a comprehensive examination of the influence of hydrogen (H2) carrier gas flux on the uniformity of epitaxial layers, specifically focusing on the InGaP single layer and the full structure of the InGaP/GaAs heterojunction bipolar transistor (HBT). The results show that an elevated flux of H2 carrier gas markedly facilitates the stabilization of layer uniformity. Optimal uniformity in epitaxial wafers is achievable at a suitable carrier gas flux. Furthermore, this study reveals a significant correlation between the uniformity of the InGaP single layer and the overall uniformity of HBT structures, indicating a consequential interdependence.

show abstract

Ge/GaAs Hetero-structured n-p-n Transistor

Mil’shtein¹,

Asthana²

2022

2022 IEEE 31st Microelectronics Design &Amp; Test Symposium (MDTS)

View full text Add to dashboard Cite

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

Cited by 3 publications

References 9 publications

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Characterization and modeling the effect of temperature on power HBTs InGaP/GaAs

Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity

Ge/GaAs Hetero-structured n-p-n Transistor

Contact Info

Product

Resources

About