Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green gap phenomenon

Roy, Sourav; Ahsan, S.M. Tasmeeh; Howlader, Ashraful Hossain; Kundu, Diponkar; Boby, Shakil Mahmud; Islam, Md. Rasidul; Khan, Md. Shahrukh Adnan; Dhar, Shuvagoto; Hossain, Md. Amzad

doi:10.1016/j.mtcomm.2022.103705

Cited by 7 publications

(2 citation statements)

References 51 publications

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“…In other words, due to the increased In content, the LIQW’s capture ability for both electrons and holes is enhanced, leading to an increased carrier concentration in the LIQW in high-In-content samples. It is well known that if a large number of carriers are injected into InGaN QWs, the influence of polarization electric field in the InGaN well can be partially screened, thus weakening the QCSE and increasing the radiative recombination rates of electrons and holes [ 22 ]. Therefore, for sample C, since the concentrations of electrons and holes are the largest in the LIQW, the radiative recombination rate is the highest due to the strongest carrier screening effect in the LIQW, as can be seen in Figure 3 .…”

Section: Resultsmentioning

confidence: 99%

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Liu,

Zhao

et al. 2023

Micromachines

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Currently, GaN-based blue- and green-light-emitting devices have achieved successful applications in practice, while the luminescence efficiency of devices with longer wavelengths (such as yellow light) is still very low. Therefore, in this paper, the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content in the last InGaN quantum well, which is next to the p-type GaN electrode layer, are investigated numerically to reveal a possible physical mechanism by which the different distribution of In content in the active region impacts the carrier capture and the light emission process in yellow InGaN/GaN MQWs. The simulation results show that at low injection currents, the luminescence efficiency of high-In-content yellow MQWs is enhanced, which can be ascribed to the enhanced radiative recombination process induced by the increased carrier concentration in the last InGaN quantum wells with promoted carrier capture ability. However, in the case of high injection condition, the luminescence efficiency of yellow MQWs deteriorates with increasing In content, i.e., the droop effect becomes remarkable. This can be ascribed to both significantly enhanced Auger recombination and electron leakage in the last InGaN quantum well, induced also by the promoted capture ability of charge carriers.

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Section: Resultsmentioning

confidence: 99%

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Liu,

Zhao

et al. 2023

Micromachines

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“…III-nitride semiconductors have been widely used in next-generation light sources and advanced display systems. In particular, InGaN-based light-emitting diodes (LEDs) are desirable for light sources in displays and lighting systems with a variety of visible-light colors ranging from blue to green emission, except for red emission because of severe material degradation and a strong quantum-confinement Stark effect. − Therefore, to realize a full-color LED display, AlGaAs- or AlGaInP-based red LEDs must be combined with InGaN-based blue and green LEDs. − In addition, in the next-generation micro-LED display, the integration of high-transfer technologies between the LED wafers and the display panel is highly challenging work in reducing manufacturing cost and improving display reliability. , Therefore, instead of the complex process of transferring two or more light sources, the monolithic red (R), green (G), and blue (B) InGaN-based LEDs capable of achieving three RGB color emissions on one wafer have been studied by using various quantum-well structures and nanostructure- (e.g., nanofacets, nanocolumns, and nanodisks). ,− Among monolithic RGB LED technologies for micro-LED display light sources, semipolar InGaN-based LEDs are attracting much attention because they can emit full-color emissions from red to blue using strong indium localization. − In general, because the indium incorporation rate of a semipolar (11–22) GaN film is higher than that of nonpolar GaN films, the semipolar (11–22) GaN is useful for achieving longer-wavelength (>500 nm) LEDs . The incorporation of indium in semipolar GaN films has been demonstrated to be influenced by the crystallographic planes of their arrowhead-like surface structure. − The arrowhead-like surface structure of the semipolar (11–22) GaN film has a few crystal planes, such as (20–21), (10–11), and (11–22), that can exhibit different indium compositions .…”

Section: Introductionmentioning

confidence: 99%

Microdisk-Type Multicolor Semipolar Nitride-Based Light-Emitting Diodes

Kim¹,

Na²,

Park³

et al. 2022

ACS Appl. Nano Mater.

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Recently, III-nitride semiconductors have gained immense attention for application in high-performance optoelectronic devices. However, in the device fabrication process, it is essential to develop a wet-etching process for conventional polar nitride-based devices to reduce the dry-etching damage. In this study, semipolar microdisk (MD)-type light-emitting diodes (LEDs) are fabricated using only a wet-etching process. The wet-etching rate of the n-type GaN film is the highest, followed by those of the undoped and p-type GaN films. The n- and p-type GaN films exhibit upward and downward surface-band-bending heights, respectively, because of which they can easily attract and repel OH– to form Ga2O3. In addition, the fully wet-etched MD-LED shows high light extraction efficiency from the etched nanofacets because of the increase in the escape cone angle with low etching damage. The smaller diameters of the MD-LEDs result in shorter emission wavelengths, allowing multicolor emission ranging from the violet (∼420 nm) to amber (∼620 nm) wavelengths to be achieved on a single LED wafer. Thus, monolithic multicolor emissions and increased light output power are achieved by fabricating parallel-connected MD-LED arrays using only a wet-etching process.

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