Comparative frequency-resolved photoconductivity studies of amorphous semiconductors

Kaplan, R.

doi:10.1016/j.solmat.2004.05.015

Cited by 7 publications

(4 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, in the case of continuous distribution of traps the value of γ may be anywhere between 0.5 and 1.0, depending on the intensity and the temperature range. It was already reported that the value of γ is independent of excitation light wavelength [15] . However, its value depends on the temperature [18] .…”

Section: Dependence Of Light Intensity Of the Mpcmentioning

confidence: 90%

“…In most cases, a dependence is found and the exponent γ in this power-law relation has quite complicated variations with temperature(T), photon energy(hv), light intensity(F) and applied electric field [15][16][17] . Rose [16] suggests that γ=1 corresponds to monomolecular recombination and γ=0.5 to bimolecular recombination.…”

Section: Dependence Of Light Intensity Of the Mpcmentioning

confidence: 99%

See 1 more Smart Citation

The modulated photocurrent of amorphous HgCdTe thin films

et al. 2011

View full text Add to dashboard Cite

Amorphous HgCdTe thin films were deposited on quartz substrate by RF magnetron sputtering technique. The modulated photocurrent(MPC) of amorphous HgCdTe thin films has been investigated as a function of temperature T, the excitation light intensity F, and applied electric fields E B . The results indicated that the modulated photocurrent show an activated behavior in the range of 80K-300K. The activated energy ΔE ap of the modulated photocurrent was found to strongly depend on temperature, whereas it is nearly independent of the applied electric field. The exponent γ in the power law relationship (I p ∝F γ ) between excitation light intensity F and modulated photocurrent of amorphous HgCdTe thin films was obtained at different temperature. The γ depends strongly on the temperature T, but it is independence of applied electric fields E B . The values of exponent γ of amorphous HgCdTe thin films lie between 0.5 and 1.0. The results indicated a continuous distribution of localized states exists in amorphous HgCdTe thin films.

show abstract

Section: Dependence Of Light Intensity Of the Mpcmentioning

confidence: 90%

Section: Dependence Of Light Intensity Of the Mpcmentioning

confidence: 99%

The modulated photocurrent of amorphous HgCdTe thin films

et al. 2011

View full text Add to dashboard Cite

show abstract

“…(2) It is now well-known that the value of υ differs in various chalcogenide materials [17]. Mostly, a sublinear dependence is found and the υ in Eq.…”

Section: Resultsmentioning

confidence: 99%

A Comparison of DC and Modulated Photocurrent in Chalcogenide Glasses

Kaplan

2019

Acta Phys. Pol. A

Self Cite

View full text Add to dashboard Cite

A comparison of DC and frequency modulated photocurrent measurements in amorphous (a-) Se, a-As2Se3, and a-As2Te3 chalcogenide thin films are carried out at room temperature. Current-voltage I-V characteristics are examined and series resistances are determined under dark and different light intensities. The exponent υ in the power-law relationship, I ph ∼ G υ between generation rate, G, and photocurrent, I ph , are calculated at different applied voltages and modulation frequencies. The small υ values are obtained for DC applied voltages (25-500 V), but high υ values are found for various modulation frequencies (500-3950 Hz). We report that υ is almost independent of applied voltage and modulation frequency within the experimental uncertainty, but it strongly depends on sample characteristics. The results are also compared in detail and interpreted for all threetype samples.

show abstract

“…It is now well-known that the value of the exponent m differs in various semiconductors and has quite complicated variations with temperature, applied electric field, photon frequency and light intensity [15][16][17]. It is common practice to attribute m between 0.5 and 1.0 to a mixture of two limiting recombination mechanisms [18]: a monomolecular recombination type occurring through recombination centers (dangling bonds, midgap, localized levels) which would correspond to m % 1.0 and a bimolecular recombination process, in which the excess charge carriers recombine directly from the band tails (m % 0.5).…”

Section: Resultsmentioning

confidence: 99%