2024
DOI: 10.1109/access.2024.3350728
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Comparative Evaluation of Three-Phase Three-Level GaN and Seven-Level Si Flying Capacitor Inverters for Integrated Motor Drives Considering Overload Operation

Gwendolin Rohner,
Tino Gfrörer,
Pascal S. Niklaus
et al.

Abstract: Integrated Motor Drives (IMDs) are gaining popularity in industrial Variable Speed Drive (VSD) applications, thanks to their more compact realization and simpler installation. However, mission profiles of, e.g., servo applications, demand overload torques of two to three times the nominal value during several seconds, which is thermally challenging for the power electronics. Accordingly, high efficiency and power density of the inverter are of paramount importance for motor integration. Multi-Level Flying Capa… Show more

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Cited by 2 publications
(13 citation statements)
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(52 reference statements)
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“…For this voltage range Wide-Bandgap (WBG) devices (e.g., SiC or GaN technology) offer superior on-state and switching characteristics, which allow high switching frequencies at low semiconductor losses. The impact of the overload capability on the selection of semiconductors available on the market has been discussed in detail in [5]. The large currents during the overload operation lead to dominating conduction losses, and thus, only semiconductors with low R dson values (i.e., large die areas) and good cooling performance (low R th and large cooling pads) are feasible.…”
Section: Semiconductorsmentioning
confidence: 99%
See 4 more Smart Citations
“…For this voltage range Wide-Bandgap (WBG) devices (e.g., SiC or GaN technology) offer superior on-state and switching characteristics, which allow high switching frequencies at low semiconductor losses. The impact of the overload capability on the selection of semiconductors available on the market has been discussed in detail in [5]. The large currents during the overload operation lead to dominating conduction losses, and thus, only semiconductors with low R dson values (i.e., large die areas) and good cooling performance (low R th and large cooling pads) are feasible.…”
Section: Semiconductorsmentioning
confidence: 99%
“…This leads to an implementation of a single switch with two parallel top-cooled 650 V GaN HEMTs (GS66516-T, 25 mΩ, [36]) for both, the 3L-FCC and the 2L-SSC. The detailed switching loss data of these devices are also provided in [5].…”
Section: Semiconductorsmentioning
confidence: 99%
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