Comparative evaluation of SiC/GaN “MOSFET” transistors under different switching conditions

Abstract

The aim of this paper is to conduct a mutual comparison of switching energy losses in cascade gallium nitride (GaN) and silicon "super junction" MOSFET” transistor, in both cases designed for a maximum operating voltage of (650 V). For the analysis of switching characteristics of transistors used double pulse test method by using detailed SPICE simulation model. Data on transient on and off processes were generated using the “LTspice” simulation package in a wide range of drain currents with two different gate resistance values of the tested transistors. The total energy losses in the GaN have been simulated during one transistor at (on and off cycle). The obtained results indicate that the superior switching characteristics of GaN devices for a drain current of (30 A) is five to eight times less than the switching characteristics of silicon “MOSFET” transistor when compared to silicon components, especially during operation of transistors with high drain currents.

Design of current controlled instrumental amplifier by using complementary metallic oxide semiconductor technology

“…The main disadvantage of these circuits is the needed for several matching resistors to achieve a desired high level of CMRR [5]. In addition, the limitation of voltage gain that produced by voltage-mode amplifiers is dependent on the gain-bandwidth parameter [6]. On the side, in current-mode of these amplifiers, the CMRR is independent of the resistor mismatching, while, the voltage gain is not limited by the gain-bandwidth [7].…”

The Influence of the Mixed Electric Line Poles on the Distribution of Magnetic Field

“…The advantage of analytical model is in the ability to express the field level depending on the transmission line parameters and simplify the analysis of new configurations. The disadvantage of these models is that they are based on many assumptions [10].…”