Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions

Vechalapu, Kasunaidu; Bhattacharya, Subhashish; Brunt, Edward Van; Ryu, Sei‐Hyung; Grider, David; Palmour, John W.

doi:10.1109/ecce.2015.7309787

Cited by 44 publications

(29 citation statements)

References 7 publications

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“…There are several publications on the loss measurements with the hard switching of devices [5,6,7], but few on that with the soft switching [8,9,10]. Additionally, none of the publications have compared the losses between the electrical and calorimetric loss measurements where the main contribution of the paper lies.…”

Section: Introductionmentioning

confidence: 99%

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Tiwari

Langelid

Midtgård

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control circuit is employed in a half-bridge series resonant inverter topology with a split dc-link and an LC load in order to emulate a real inverter operation. This results in a square wave output voltage and a sine wave output current where the switching is performed before the zero crossing of current (an inductive mode). In addition, a calorimetric loss measurement is carried out in a 78 kW full-bridge resonant inverter switching at about 200 kHz yielding an efficiency of 99 %. Moreover, this paper aims to find the highest possible switching frequency achievable with the selected module. Besides, the electrically measured loss is compared with the calorimetrically measured loss and the possible reasons for discrepancies are discussed.

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Section: Introductionmentioning

confidence: 99%

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Tiwari

Langelid

Midtgård

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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show abstract

“…Moreover, several others have compared the switching performances of SiC devices and their Si counterparts. For example, a SiC MOSFET is compared with a Si IGBT in [3] and a SiC IGBT in [4].…”

Section: Introductionmentioning

confidence: 99%

Experimental performance evaluation of two commercially available, 1.2 kV half-bridge SiC MOSFET modules

Tiwari

Midtgård

Undeland

2016

IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society

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Abstract-In this paper, the switching performances of two state-of-the-art half-bridge SiC MOSFET modules are evaluated using a standard double pulse test methodology. The selected modules are commercially available, and have the same voltage and current ratings. A comparative study is carried out under various conditions such as similar dv/dt, di/dt, and current and voltage overshoots. Additionally, the lab setup is simulated in LTspice in order to investigate the impact of stray inductances in the switching performances. Both the simulations and the experimental measurements give insight in the significance of low inductive layouts to utilize the fast switching feature of SiC.

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“…Two types of structure functions are defined: differential and cumulative structure functions. The differential structure function, given by (1), is defined in [17] as the derivative of the cumulative thermal capacitance with respect to the cumulative thermal resistance, where a peak represents a new interface in the heat flow path.…”

Section: B Power Cycling Of Sic In To-247 Packagesmentioning

confidence: 99%

“…Furthermore, as the issue of low minority carrier lifetimes in SiC is improved to enable conductivity modulation in bipolar devices, SiC IGBTs and GTOs with significantly higher voltage ratings will become a reality. 15 kV SiC IGBTs have been already been demonstrated alongside 15 kV SiC power MOSFETs [1].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of SiC Schottky Diodes Using Pressure Contacts

Gonzalez

Alatise

Aliyu

et al. 2017

IEEE Trans. Ind. Electron.

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Abstract-The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reverse conduction capability. In these high power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC) meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated.

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Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions

Cited by 44 publications

References 7 publications

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Experimental performance evaluation of two commercially available, 1.2 kV half-bridge SiC MOSFET modules

Evaluation of SiC Schottky Diodes Using Pressure Contacts

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