Comparative crystal growth of GaPO4 crystals in the retrograde and direct solubility range by hydrothermal methods of temperature gradient

Balitsky, Denis; Philippot, E.; Papet, Philippe; Balitsky, V. S.; Pey, F.

doi:10.1016/j.jcrysgro.2004.11.028

Cited by 18 publications

(13 citation statements)

References 16 publications

(22 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The experimental growth conditions of this hydrothermally grown a-GaPO 4 crystal are given in Ref. [8]. Its IR spectrum presents a large band between 3700 and 3000 cm À1 (O-H infrared region) superimposed to 3 well-separated peaks centered at 3167, 3290 and 3400 cm À1 .…”

Section: Infrared Transmission Studymentioning

confidence: 99%

See 1 more Smart Citation

Characterizations of piezoelectric GaPO4 single crystals grown by the flux method

Armand

Beaurain

Rufflé³

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Infrared Transmission Studymentioning

confidence: 99%

“…4a and b show the DSC plots of, respectively, hydrothermally grown and flux-grown a-GaPO 4 single crystals from our laboratory [6,8]. On heating runs, an endothermic peak appears at the onset temperatures of 1105 1C in Fig.…”

Section: Thermal Behaviormentioning

confidence: 99%

Characterizations of piezoelectric GaPO4 single crystals grown by the flux method

Armand

Beaurain

Rufflé³

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

“…As materials satisfying three of the above-mentioned conditions, langasite La 3 Ga 5 SiO 14 (LGS)-type crystals, 1)3) rare-earth calcium oxoborate ReCa 4 O(BO 3 ) 3 (Re = rare earth elements, ReCOB) crystals, 4),5) gallium phosphate GaPO 4 , 6), 7) and AlN and its modified thick films 8), 9) have been intensively investigated. Although combustion pressure sensors for automobile engines have been produced from langasite-type crystals on a laboratory scale for practical applications, they do not possess sufficient resistivity.…”

Section: Introductionmentioning

confidence: 99%

“…The bulk growth of GaPO 4 crystals by a hydrothermal method is very slow and difficult because of the complex temperature dependence of their solubility in phosphoric acid. 7) ReCOB crystals are characterized by very low crystal symmetries (monoclinic m) and pyroelectric properties. 4),5) AlN and its modified thick films also exhibit pyroelectricity and high chemical reactivity with water vapor.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of strontium-substituted Ca2Al2SiO7 piezoelectric single crystals

Takeda

Yoshida

Okudera

et al. 2017

J. Ceram. Soc. Japan

View full text Add to dashboard Cite

We report the effect of Sr substitution on the structural, electrical, and mechanical properties of Ca 2 Al 2 SiO 7 (CAS) piezoelectric single crystals for high-temperature pressure sensors. Single crystals of Sr-substituted CAS (Sr-CAS) with a nominal chemical composition of CaSrAl 2 SiO 7 were grown by using the Czochralski technique. The single-crystal X-ray structure analysis revealed that Sr atoms were placed in the Ca decahedral sites, which decreased the polyhedral distortion slightly. The piezoelectric modulus d¤ 31 and electrical resistivity of Sr-CAS measured at 23°C were slightly lower than those of CAS, but still sufficient for the satisfactory performance of the produced sensors. The rupture strength of the Sr-CAS crystal was 230 MPa, 1.2 times higher than that of a CAS crystal. The obtained results suggest that Sr-CAS crystals can be candidate materials for high-temperature pressure sensors.

show abstract

“…This high temperature allotropic transition does not permit the growth of α-GaPO 4 crystals by conventional melt techniques. Single crystals of α-GaPO 4 were grown using epitaxial hydrothermal-based methods in a retrograde-solubility range at T < 250 °C and in the range of direct temperature dependence of solubility at T > 300 °C from highly corrosive acid solutions [40,43,[47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62]. However, for gallium orthophosphate material, it seems quite difficult to obtain very high quality crystals with these solution-based growth methods.…”

Section: Introductionmentioning

confidence: 99%

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

et al. 2014

View full text Add to dashboard Cite

Using the slow-cooling method in selected MoO 3 -based fluxes, single-crystals of GeO 2 and GaPO 4 materials with an α-quartz-like structure were grown at high temperatures (T ≥ 950 °C). These piezoelectric materials were obtained in millimeter-size as well-faceted, visually colorless and transparent crystals. Compared to crystals grown by hydrothermal methods, infrared and Raman measurements revealed flux-grown samples without significant hydroxyl group contamination and thermal analyses demonstrated a total reversibility of the α-quartz ↔ β-cristobalite phase transition for GaPO 4 and an absence of phase transition before melting for α-GeO 2 . The elastic constants C IJ (with I, J indices from 1 to 6) of these flux-grown piezoelectric crystals were experimentally determined at room and high temperatures. The ambient results for as-grown α-GaPO 4 were in good agreement with those obtained from hydrothermally-grown samples and the two longitudinal elastic constants measured versus temperature up to 850 °C showed a monotonous evolution. The extraction of the ambient piezoelectric stress contribution e 11 from the C D 11 to C E 11 difference gave for the piezoelectric strain coefficient d 11 of flux-grown α-GeO 2 crystal a value of 5.7(2) pC/N, which is more than twice that of α-quartz. As the α-quartz structure of GeO 2 remained stable up to melting, a piezoelectric activity was observed up to 1000 °C.

show abstract

Comparative crystal growth of GaPO4 crystals in the retrograde and direct solubility range by hydrothermal methods of temperature gradient

Cited by 18 publications

References 16 publications

Characterizations of piezoelectric GaPO4 single crystals grown by the flux method

Characterizations of piezoelectric GaPO4 single crystals grown by the flux method

Growth and characterization of strontium-substituted Ca<sub>2</sub>Al<sub>2</sub>SiO<sub>7</sub> piezoelectric single crystals

Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

Contact Info

Product

Resources

About