Comparative calculations of electron transport properties in 6H–SiC using three and five valley models

Abstract

Steady-state electron properties are investigated in 6H–SiC at various temperatures, using Monte Carlo simulation where the band structure model is a major part when dealing with high fields. The aim of this work is to optimize the number of valleys involved in the simulation program in order to obtain accurate results while improving the calculation efficiency. For high fields, a five valley model was found to be more accurate than a three valley model and as efficient as the full band method though much less computer time-consuming.