2022
DOI: 10.1016/j.micrna.2022.207334
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Comparative analysis of strain engineering on the electronic properties of homogenous and heterostructure bilayers of MoX2 (X = S, Se, Te)

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Cited by 15 publications
(2 citation statements)
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“…The energy-mesh cutoff is taken as 125 Hartree, which is 1.25 times the highest default energy-mesh cutoff value (~100 Hartree) to ensure a proper trade-off between the reliability of the calculation and the overall computational cost. Moreover, the energy-mesh cutoff in the range of 100-200 Hartree in the LCAO basis set of ATK has also been reported previously in the literature [18,[28][29][30].…”
Section: Simulation Frameworksupporting
confidence: 60%
“…The energy-mesh cutoff is taken as 125 Hartree, which is 1.25 times the highest default energy-mesh cutoff value (~100 Hartree) to ensure a proper trade-off between the reliability of the calculation and the overall computational cost. Moreover, the energy-mesh cutoff in the range of 100-200 Hartree in the LCAO basis set of ATK has also been reported previously in the literature [18,[28][29][30].…”
Section: Simulation Frameworksupporting
confidence: 60%
“…It is well-known that in-plane strain is one of the most common and effective methods to optimize the electronic structure of 2D layered materials, and it is inevitable in 2D/2D vdW heterojunctions. [69][70][71] For the 2D/2D BlueP/g-SnS heterostructure, the type-I band alignment and its band edge positions are not suitable for photocatalytic water splitting. Therefore, it is feasible and meaningful to investigate whether biaxial strains could induce novel electronic properties and enhance the photocatalytic performance of the BlueP/g-SnS heterobilayer.…”
Section: Strain Effectsmentioning
confidence: 99%