Comparative analysis of oxides to improve performance of DC-MOS-HEMTs

Pal, Praveen; Pratap, Yogesh; Gupta, Mridula

doi:10.1109/mos-ak.2019.8902420

Cited by 1 publication

(1 citation statement)

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“…There are many studies regarding the use of new materials and different process steps in order to have a more stabilized threshold voltage V t for a normally-off MISHEMT [3, 6, 9-11, 17, 20, 21], the implementation of different geometries [22] and multiple channels [23]. A model for the 2DEG channel density has been created [24], and the study of lowfrequency noise has also been performed [13,25,26].…”

Section: Introductionmentioning

confidence: 99%

MISHEMT intrinsic voltage gain under multiple channel output characteristics

Canales,

Perina,

Martino

et al. 2023

Semicond. Sci. Technol.

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In this paper the MISHEMT device (Metal/Si3N4/AlGaN/AlN/GaN - Metal-Insulator-Semiconductor High Electron Mobility Transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain (Av). It is shown that the total drain current is composed of 3 different drain current components, whereof one is related to theMIS channel and the other two are related to HEMT channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the Early voltage increment in the second plateau whereHEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.investigate the device saturation regime.

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