Comparative analysis of oxide phase formation and its effects on electrical properties of SiO2/InSb metal-oxide-semiconductor structures

Sulfur-Passivated InSb Nanowires for Infrared Photodetectors

“…[42][43][44]47 Notably, the phenomenon of a broadened doublet peak with an increase in the spectrum at 445.5 and 453.1 eV, attributed to InO x , was not observed. [42][43][44]47 The small amount of In 2 O 3 particles at the bottom of the product was not detected by XRD because the XPS spot is smaller and weaker, and it was absorbed by the dense NWs above. From the XPS results before and after etching, we can deduce that the surface structure of the S-InSb NW is as shown in Figure 2c.…”

“…The study of the In 3d XPS spectrum is illustrated in Figure b. Derived from the spin–orbit splitting effect, the In 3d spectrum also can be deconvoluted into two peak envelopes of In 3d 5/2 (444.5 eV) and In 3d 3/2 (452.1 eV). − , Notably, the phenomenon of a broadened doublet peak with an increase in the spectrum at 445.5 and 453.1 eV, attributed to InO x , was not observed. − , The small amount of In 2 O 3 particles at the bottom of the product was not detected by XRD because the XPS spot is smaller and weaker, and it was absorbed by the dense NWs above. From the XPS results before and after etching, we can deduce that the surface structure of the S-InSb NW is as shown in Figure c.…”

Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy

“…Two distinct peaks at 113 cm -1 (TO mode) and 153 cm -1 (LO mode) corresponding to elemental Sb were shown when the oxide layer was deposited above 300 o C [6]. This indicates that the Sb layers having metallic properties were formed due to the decomposition of InSb and the chemical reaction with Sb 2 O 3 [7]. 4(b) and 4(c), respectively.…”