Comparative analysis of optically pumped intersubband lasers and intersubband Raman oscillators

Abstract

A new tunable source of the far-infrared radiation based on intersubband electronic Raman scattering in semiconductor quantum wells is proposed. The gain and threshold of the proposed Raman oscillator are estimated and compared with the intersubband laser.

Electric-field effects on intersubband Raman laser gain in modulation-doped GaAs/AlGaAs coupled double quantum wells

“…Further, later experiments [3] have revealed a new feature of the emission energy. The observed lasing energy does not correspond well to the intersubband (ISB) transition energy, which was predicted by Khurgin et al [4], but it appears at the ISB plasmon energy coupled to the longitudinal optical (LO) phonons. This suggests us that the ISB transitions should be considered as collective rather than the single-particle excitations due to the interactions between electron-electron and electron-LO phonons.…”

Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers

“…The following Hamiltonian in the hierarchy is constructed with the same operators as in the initial Hamiltonian (9), and with the same factorization energy , but in reverse order: (11) and it has a real (physical) bound state at in its eigenspectrum. The normalized wavefunctions of the new Hamiltonian are given by (12) or, after performing the operator action (13) where is the Wronskian. In the case , however, the wavefunction (14) has to be normalized numerically.…”

“…In this class, the GaAs-AlGaAs multiple QW (MQW) structures have been considered for far-infrared applications [10], and the asymmetric coupled QWs for the mid-infrared range [11]. Among the optically pumped lasers, we may mention the proposal of tunable (8-12 m) lasers based on electronic Raman scattering in GaAs-AlGaAs QWs [12], [13]. Among the most important issues in the design of intersubband lasers is the maximization of gain.…”

Electron Raman scattering in semiconductor step-quantum well

“…The development of several experimental techniques, has allowed the nanometer-scale confinements of the band electrons in semiconductor materials, showing a variety of quantum phenomena; such as low-dimensional electron states and modified dynamics of carriers in the systems [1][2][3][4][5][6][7]. The Raman scattering is a useful technique to study the electronic structure of semiconductor nanostructures and other materials.…”