Comparative Analysis of Nitrides Band Structures Calculated by the Empirical Pseudopotential Method

Ziadé, P.; Palermo, C.; Khoury, A.; Habchi, Roland; Rahal, Myriam; Varani, L.

doi:10.13189/ujms.2014.020303

Cited by 2 publications

(2 citation statements)

References 88 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Pseudopotential form factors for non-zincblende compounds, such as wurtzite GaN, AlN, InN, and ZnO have been successfully calculated and are available [36][37][38][39][40][41][42] as are those for many other semiconductors [43][44][45][46][47][48][49][50][51][52]. The difference when dealing with non-zincblende compounds comes down to altering equation (10) and the unit cell definition but it is conceptually identical to the process here.…”

Section: Theoretical Basis For Pseudopotential Methodsmentioning

confidence: 99%

Pseudopotential form factors and electronic band structures for AlAs, AlP, BAs, BP, 3C-SiC, and cubic-GaN

Ng¹,

Danner²

2021

Phys. Scr.

View full text Add to dashboard Cite

This letter introduces the pseudopotential method from first principles and demonstrates its use to determine the band structures of various semiconductors. An annotated Mathematica program, which is made available in the supplementary information, has been written to calculate fully vectorial electronic band structures in materials with diamond or zincblende crystal structures. The program could be modified for other crystal types. Making use of recently measured energy gap values for various zincblende crystals, the pseudopotential form factors of AlAs, AlP, BAs, BP, 3C-SiC, and cubic GaN, have been calculated with an iterative method and the complete electronic band structures are given. This extends the series of known form factors for semiconductors with diamond and zincblende crystal structures.

show abstract

Section: Theoretical Basis For Pseudopotential Methodsmentioning

confidence: 99%

Pseudopotential form factors and electronic band structures for AlAs, AlP, BAs, BP, 3C-SiC, and cubic-GaN

Ng¹,

Danner²

2021

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…As impact ionization is stochastic in nature, the Monte Carlo method was employed on GaN, a binary III-V direct bandgap semiconductor material that has a wurtzite crystal structure, 26,27) as shown in Fig. 1 in this work.…”

Section: Methods and Modelsmentioning

confidence: 99%

Avalanche characteristics in thin GaN avalanche photodiodes

Cheang¹,

Wong²,

Teo³

2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride (GaN) avalanche photodiodes (APDs) for ultraviolet detection in industry is developed. This work simulated avalanche characteristics such as impact ionization coefficients, mean multiplication gain and excess noise factor of GaN APDs at 0.05 μm, 0.1 μm, 0.2 μm and 0.3 μm multiplication widths in an electric field. The model simulates higher electron impact ionization coefficients than that of the hole for an electric field greater than 4.04 MV cm−1. Mean multiplication gain and excess noise factor are simulated based on the electric field dependent impact ionization coefficients. Our results show that electron-initiated multiplication gives higher multiplication gain and lower excess noise than hole-initiated multiplication for a multiplication width below 0.3 μm. Devices with dead space in general give a lower excess noise.

show abstract

Comparative Analysis of Nitrides Band Structures Calculated by the Empirical Pseudopotential Method

Cited by 2 publications

References 88 publications

Pseudopotential form factors and electronic band structures for AlAs, AlP, BAs, BP, 3C-SiC, and cubic-GaN

Pseudopotential form factors and electronic band structures for AlAs, AlP, BAs, BP, 3C-SiC, and cubic-GaN

Avalanche characteristics in thin GaN avalanche photodiodes

Contact Info

Product

Resources

About