Comparative analysis of interdiffusion in some thin film metal couples at room temperature

The growth of intermetallic compounds at Sn-Ag-Cu solder/Cu and Sn-Ag-Cu solder/Ni interfaces and the associated evolution of the solder microstructure

“…[2][3][4][5][6][7] During reflow of Pb-Sn solder on Cu surfaces, Cu 6 Sn 5 was observed to grow first. Subsequent heat treatment eventually led to the growth of the Cu 3 Sn phase as well.…”

Study on Sn–Ag Oxidation and Feasibility of Room Temperature Bonding of Sn–Ag–Cu Solder

“…It is assumed mainly due to the difference in the diffusion and oxidation rate between Au and Cu. As the interdiffusion coefficient of Au to Sn (7:4 Â 10 À15 cm 2 s À1 ) at room temperature is larger than that of Cu to Sn (6:6 Â 10 À17 cm 2 s À1 ), 26) in vacuum and N 2 , the activated Au and Sn may very diffuse very fast in each other on contact, resulting in strong formation of a bond between Au and Sn. In the atmospheric air, Cu is oxidized more easily, so a thicker oxide layer and a relatively lower diffusion rate might decrease the bond strength.…”

Induced defects in a-Si:H/a-SiNx:H multilayers by use of EMT and PAT

“…According to this model, we present the following relations to calculate the I 2 value of the multilayer: On the basis of the experimental results above, it is known that, in the a-Si:H sublayer of an a-Si:H/a-SiN x :H (X = 0.5) multilayer, the induced defects exist in the interface region away from the substrate, and are situated in the subregion remote from the interface, by about ≈8Å, the thickness of the subregion is L S −T S ≈ 50Å, the induced defect density can be estimated from i S 2 to be about 10 11 cm 3 , and equal to the result of electromagnetic experiment. In the other subregion which is close to the interface, its thickness is T S ≈ 8Å, and there are few or no induced defects, because the dangling bonds there can be saturated by H atoms and N atoms [8][9][10] diffused from the a-SiN x :H deposited film [11,12] during the preparation of the multilayer. This shows that the H atoms and the N atoms diffused from the a-SiN x :H deposited film can infiltrate into the a-Si:H sublayer by about 8Å.…”