Comparative Analysis of Buried-Gate GaN OPFET Models for UV Photodetector Applications

Gaitonde, Jaya V.; Rawat, Sudhir Pal Singh; Lohani, Rajesh B.

doi:10.1109/upcon.2018.8596854

Cited by 4 publications

(3 citation statements)

References 34 publications

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“…The gate materials being used are the gold (Au) and Indium-Tin-Oxide (ITO) for GaN, Au for SiC, and Au and silver dioxide (AgO 2 ) for ZnO. The key changes of the present work with respect to the conference paper are that the original work only presented the performance evaluation and analysis of the generalized and the front-illuminated GaN OPFET models with Au gate and compared that to the previously published results on the GaN buried-gate OPFET models [12] towards high resolution UV imaging and UV communication applications. These devices could resolve subtle variations in light intensity better than the buried-gate devices and comparable to the reported literature [13]- [21] without much compromising the other detector parameters which were also superior to most of the existing detectors.…”

Section: Conference and Workhop (Multicon-w 2019) International Conmentioning

confidence: 99%

“…The previous works on GaN-based buried-gate OPFET, generalized model of OPFET and front-illuminated OPFET UV detectors with Au gate showed excellent photoresponse, fast response times, high detectivity along with enhanced bandwidth [1] [12]. The sensitivity or dynamic range of the buried-gate OPFET was low down to 14 dB.…”

Section: Conference and Workhop (Multicon-w 2019) International Conmentioning

confidence: 99%

“…Performance comparison of GaN, SiC, and ZnO OPFET illumination models.GaN buried-gate front illuminated OPFET with Au gate (v gs = 0 V, V ds = 10 V, λ = 350 nm)[12] …”

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confidence: 99%

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Analysis of Wide-Bandgap Material OPFET UV Detectors for High Dynamic Range Imaging and Communication Applications

Gaitonde¹,

Lohani²

2019

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The ultraviolet (UV) photoresponses of Wurtzite GaN, ZnO, and 6H-SiC-based Optical Field Effect Transistor (OPFET) detectors are estimated with an in-depth analysis of the same considering the generalized model and the front-illuminated model for high resolution imaging and UV communication applications. The gate materials considered for the proposed study are gold (Au) and Indium-Tin-Oxide (ITO) for GaN, Au for SiC, and Au and silver dioxide (AgO 2) for ZnO. The results indicate significant improvement in the Linear Dynamic Range (LDR) over the previously investigated GaN OPFET (buried-gate, front-illuminated and generalized) models with Au gate. The generalized model has superior dynamic range than the front-illuminated model. In terms of responsivity, all the models including buried-gate OPFET exhibit high and comparable photoresponses. Buried-gate devices on the whole, exhibit faster response than the surface gate models except in the AgO 2-ZnO generalized OPFET model wherein the switching time is the lowest. The generalized model enables faster switching than the front-illuminated model. The switching times in all the cases are of the order of nanoseconds to picoseconds. The SiC generalized OPFET model shows the highest 3-dB bandwidths of 11.88 GHz, 36.2 GHz, and 364 GHz, and modest unity-gain cutoff frequencies of 4.62 GHz, 8.71 GHz, and 5.71 GHz at the optical power densities of 0.575 μW/cm 2 , 0.575 mW/cm 2 , and 0.575 W/cm 2 respectively. These are in overall, the highest detection-cum-amplification bandwidths among all the investigated devices. The same device exhibits the highest LDR of 73.3 dB. The device performance is superior to most of the other existing detectors along with comparable LDR, thus, emerging as a high performance photodetector for imaging and communication applications. All the detectors show considerably high detectivities owing to the high responsivity values. The re

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Section: Conference and Workhop (Multicon-w 2019) International Conmentioning

confidence: 99%

Section: Conference and Workhop (Multicon-w 2019) International Conmentioning

confidence: 99%

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Analysis of Wide-Bandgap Material OPFET UV Detectors for High Dynamic Range Imaging and Communication Applications

Gaitonde¹,

Lohani²

2019

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Configurable OPFET-Based Photodetector for 5G Smart Antenna Applications

Gaitonde

Lohani²

2022

Smart Antennas

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Switching and frequency response of ITO-gated GaAs OPFET models for VLC applications

Gaitonde

Lohani

2021

Int. j. inf. tecnol.

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Comparative Analysis of Buried-Gate GaN OPFET Models for UV Photodetector Applications

Cited by 4 publications

References 34 publications

Analysis of Wide-Bandgap Material OPFET UV Detectors for High Dynamic Range Imaging and Communication Applications

Analysis of Wide-Bandgap Material OPFET UV Detectors for High Dynamic Range Imaging and Communication Applications

Configurable OPFET-Based Photodetector for 5G Smart Antenna Applications

Switching and frequency response of ITO-gated GaAs OPFET models for VLC applications

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