Compact Thermal Resistor-Capacitor-Network Approach to Predicting Transient Junction Temperatures of a Power Amplifier Module

Yu, Y.P.; Lee, T-Y T.; Chiriac, Victor Adrian

doi:10.1109/tcpmt.2012.2198885

Cited by 47 publications

(17 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For each subset, an optimized model code can be obtained, and then a complete model code can be pieced together by summing the exponential terms in a closed form of the simple analytical expression [38]:…”

Section: A Derivation Of the Thermal Modelmentioning

confidence: 99%

See 1 more Smart Citation

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Chen¹,

Pickert

et al. 2014

IEEE Trans. Device Mater. Relib.

160

View full text Add to dashboard Cite

Abstract-This paper presents a novel real-time power device temperature estimation method which monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as on-line health monitoring for power electronic systems but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids and even delamination within the device components, especially in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.

show abstract

Section: A Derivation Of the Thermal Modelmentioning

confidence: 99%

“…In the literature, a trend is to move towards real-time power device junction temperature estimation [2]- [5] based on certain thermal models. Typical models of a single-chip power module are in the form of either Cauer network [6] [7] or Foster network [8] [9], as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Chen¹,

Pickert

et al. 2014

IEEE Trans. Device Mater. Relib.

160

View full text Add to dashboard Cite

show abstract

“…The heating/ cooling table is a simplified model of the temperature transient response. Single stage lumped model for temperature transient response T i of component i at time t can be simplified as follows [5]:…”

Section: Framework Of Stammentioning

confidence: 99%

STAM: System level state-machine-based thermal behavior analysis for multicore processor

Kwon

Park

Kim

2014

IEICE Electron. Express

View full text Add to dashboard Cite

As the density of transistors is increased, the processor suffers from not only high power consumption but also high temperature. We presented the system level thermal behavior analysis model (STAM) which uses minimum physical characteristics and activities for components of the processor to obtain thermal behaviors. STAM employs the state-machinebased model for a thermal transient response. The results show that STAM is more than three orders of magnitude faster than the existing temperature estimation tool, with about a 6% average error to find hotspots.

show abstract

“…Compact thermal models expressed as thermal resistorcapacitor (RC) networks were more widely employed to rapidly predict junction temperatures or the temperatures at a few critical locations in the power modules for electro-thermal design, thermal management, reliability and lifetime prediction [15][16][17][18][19][20][21][22][23][24]. In the simplified cases, individual power device might be considered and one dimensional heat conduction was assumed to predict the junction temperatures [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

“…In the simplified cases, individual power device might be considered and one dimensional heat conduction was assumed to predict the junction temperatures [23][24][25]. The models were constructed using either Cauer cells or Foster cells, while mathematic methods have been developed and well Jianfeng known to transform these two network models from each other [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Castellazzi

Eleffendi

et al. 2018

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

AbstractThis paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical RC network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the 6 MOSFETs under switching frequencies from 5 kHz to 100 kHz which demonstrate the good electrothermal performance of the designed power module.Index TermsMOSFETs, SiC power module, finite element methods, RC network, curve fitting, three-phase inverters.

show abstract

Compact Thermal Resistor-Capacitor-Network Approach to Predicting Transient Junction Temperatures of a Power Amplifier Module

Cited by 47 publications

References 24 publications

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

STAM: System level state-machine-based thermal behavior analysis for multicore processor

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Contact Info

Product

Resources

About