Compact synchrotron radiation lithography system for 70 nm device manufacturing

Miyatake, Tsutomu; Li, Xuan; Hirose, Sayumi; Monzen, Toshio; Fujii, Kiyoshi; Suzuki, Koji

doi:10.1116/1.1409382

Cited by 5 publications

(5 citation statements)

References 11 publications

(2 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of key ingredients for many future applications is the ability to precisely pattern nanoscale features on technologically relevant semiconductor surfaces such as silicon and germanium, as well as compound semiconductors such as gallium arsenide and indium phosphide. While photolithography continues to make seemingly unrelenting progress in the realm of patterning of sub-100 nm surface features using, for instance, shorter wavelength light sources such as extreme ultraviolet (EUV), excimer lasers, and synchrotron sources, the processes are challenging both technologically and economically. Alternative methods such as electron beam lithography, focused ion beam lithography, and scanning probe tip-mediated lithography such as dip-pen nanolithography (DPN) 6 can be used to pattern sub-20 nm surface features but are not necessarily suitable for large surface area fabrication due to their serial nature.…”

Section: Introductionmentioning

confidence: 99%

Block Copolymer Templated Chemistry for the Formation of Metallic Nanoparticle Arrays on Semiconductor Surfaces

2007

View full text Add to dashboard Cite

Precise positioning of metallic nanostructures on semiconductor surfaces is important for applications such as photovoltaics, photoelectrocatalysis, metal interconnects, sensing platforms, and many others. In this paper, we demonstrate the utilization of self-assembling diblock copolymer monolayer films, made up of polystyrene-block-poly(2- or 4-vinylpyridine) (PS-b-P2VP or PS-b-P4VP), to spatially direct an aqueous metal reduction reaction on semiconductor surfaces, a process we call galvanic displacement. The diblock copolymer forms hexagonal arrays of spherical micelles consisting of a P2VP or P4VP core surrounded by a PS corona. Two approaches were developed, termed method 1 and method 2, to deliver metal ions to the semiconductor interface in a spatially defined manner utilizing the diblock template. In method 1, a metal complex preloaded into the P4VP cores is spontaneously reduced on the surface to form hexagonally ordered metallic nanoparticles whose structures mirror the parent polymer templates. This approach was employed to produce ordered Ag nanoparticles on Ge(100), InP(100), and GaAs(100) surfaces. Method 2, on the other hand, involves coating the semiconductor surface with an unloaded self-assembled block copolymer monolayer, followed by immersion in a solution of the metal ions and additional reagents, if required. Method 2 is particularly useful to pattern semiconductor surfaces that require the presence of hydrofluoric acid (HF) as an etchant to initiate the galvanic displacement, including Si(100). Using method 2, Cu, Au, Pt, and Pd nanoparticles were patterned on the semiconductor surfaces. In addition, the apparent order of the self-assembled monolayers is better as compared to that of the preloaded block copolymers (prepared via method 1). Since the self-assembling nanostructures of the PS-b-P2VP or PS-b-P4P diblock copolymers can be inverted to a PS core surrounded by a P2VP or P4VP corona (the so-called core−corona inversion) in the presence of HF, patterns of the resulting metallic structures are influenced by this morphological shift. The effects of polymer morphology on the galvanic displacement is described, and as an alternative approach, metal ion reduction and polymer removal with hydrogen/argon plasma is outlined.

show abstract

Section: Introductionmentioning

confidence: 99%

Block Copolymer Templated Chemistry for the Formation of Metallic Nanoparticle Arrays on Semiconductor Surfaces

2007

View full text Add to dashboard Cite

show abstract

“…Compact sources based on accelerator technologies have been developed in the early 1980's and 90's for X-ray lithography. For EUVL they are not feasible because the maximum flux is limited to about 10 W [23]. Nevertheless the requirements for metrology sources are significantly lower than that for lithography.…”

Section: The Sourmentioning

confidence: 99%

Scanning scattering contrast microscopy for actinic EUV mask inspection

et al. 2016

View full text Add to dashboard Cite

Actinic mask inspection for EUV lithography with targeted specification of sensitivity and throughput is a big challenge and effective solutions are needed. We present a novel method for actinic mask inspection, i.e. scanning scattering contrast microscopy. In this method the EUV mask is scanned with a beam of relatively small spot size and the scattered light is recorded with a pixel detector. Since the mask layout is known, the scattering profile of a defect-free mask at the detector can be calculated. The signal between the measured and calculated signal provides the deviation between the real mask and its ideal counterpart and a signal above a certain threshold indicates the existence of a defect within the illumination area. Dynamic software filtering helps to suppress strong diffraction from defect free structures and allows registration of faint defects with high sensitivity. With the continuous scan of the whole mask area, a defect map can be obtained with high throughput. Therefore, we believe that this method has the potential of providing an effective solution for actinic mask inspection. Here we discuss the basic principles of the method, present proof-of-principle experiments, describe the basic components of a feasible stand-alone tool and present early results of the performance estimations of such a tool.

show abstract

“…Several compact synchrotrons were built in the 80's and 90's [15][16]. These tools were designed for lithography, not for metrology applications.…”

Section: Introductionmentioning

confidence: 99%

A high-brightness accelerator-based EUV source for metrology applications

Ekinci

Garvey

Streun

et al. 2018

Photomask Technology 2018

View full text Add to dashboard Cite

One of the challenges of actinic metrology tools for EUV lithography is the availability of light sources with high brightness, stability, and availability. In particular, actinic patterned mask inspection on EUV reticles is considered an essential tool for the EUV lithography ecosystem and it requires an EUV source of high brightness. We present the design of a compact and accelerator-based light source producing EUV radiation with high-brightness for actinic metrology applications in the semiconductor industry. Our design is based on the well-established components and design principles. The specifications required for actinic mask inspection is achieved using a short period undulator and 430 MeV electron energy. The concentric design of storage and booster rings enables stable operation with a relatively small footprint. This study shows the commercial viability of a compact and high-brightness EUV source with high stability and reliability and demonstrates its feasibility for actinic metrology applications.

show abstract

Compact synchrotron radiation lithography system for 70 nm device manufacturing

Cited by 5 publications

References 11 publications

Block Copolymer Templated Chemistry for the Formation of Metallic Nanoparticle Arrays on Semiconductor Surfaces

Block Copolymer Templated Chemistry for the Formation of Metallic Nanoparticle Arrays on Semiconductor Surfaces

Scanning scattering contrast microscopy for actinic EUV mask inspection

A high-brightness accelerator-based EUV source for metrology applications

Contact Info

Product

Resources

About