2022
DOI: 10.1364/ol.454277
|View full text |Cite
|
Sign up to set email alerts
|

Compact substrate-removed thin-film lithium niobate electro-optic modulator featuring polarization-insensitive operation

Abstract: A compact polarization-insensitive electro-optic (EO) modulator, which allows the laser and modulator to be located at different locations while using a standard single-mode fiber to interconnect them, is highly desirable for 5G or future 6G wireless networks. Herein, we propose a modulator based on substrate-removed thin-film lithium niobate. The proposed device exhibits a polarization-dependent loss of 0.35 dB and on-chip loss of approximately 2 dB. The polarization insensitivity of the proposed device was e… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 15 publications
(3 citation statements)
references
References 17 publications
0
3
0
Order By: Relevance
“…81 Driving by this robust dry etch method, rapid progresses have been made in the recent five years. 15,17,20,73,82–84 In 2018, a TFLN EO modulator with 3 dB bandwidth beyond 45 GHz and CMOS-compatible driving voltage ( V π = 1.4 V) was demonstrated, as shown in Fig. 5(a), which is considered as a milestone in the development history of TFLN EO modulators.…”
Section: State-of-the-art Of Tfln or Eop Modulatorsmentioning
confidence: 99%
“…81 Driving by this robust dry etch method, rapid progresses have been made in the recent five years. 15,17,20,73,82–84 In 2018, a TFLN EO modulator with 3 dB bandwidth beyond 45 GHz and CMOS-compatible driving voltage ( V π = 1.4 V) was demonstrated, as shown in Fig. 5(a), which is considered as a milestone in the development history of TFLN EO modulators.…”
Section: State-of-the-art Of Tfln or Eop Modulatorsmentioning
confidence: 99%
“…Table 1 and 2 summarize the progress of different TFLN modulators with the MZI structure. [ 5,6,12,15,26–107 ] Figure summarizes the half‐wave voltage, device length, and bandwidth of etched and non‐etched TFLN modulators. Both these two kinds of modulators can realize a very high bandwidth.…”
Section: Mzi‐based Tfln Modulatormentioning
confidence: 99%
“…A polarization diversity scheme is a typical approach to alleviate the polarization sensitivity in EO modulation on LN platforms. , In the scheme, the incident light of arbitrary polarization states is initially split into TE and TM polarizations, which are then transmitted along separate optical paths. Subsequently, one polarization rotates such that their polarizations are the same, and they then individually undergo identical processing.…”
Section: Introductionmentioning
confidence: 99%