Compact, narrow linewidth, continuous-wave, intracavity optical parametric oscillator pumped by a semiconductor disk laser

Hempler, Nils; Robertson, Gordon; Bromley, L. J.; Hamilton, C.J.; Malcolm, Graeme P. A.

doi:10.1364/cleo_si.2011.ctuk2

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…This is a consequence of the microcavity resonance of the SDL chip and the distributed gain (at the antinodes of the standing wave of inside the resonator) [10]. While first attempts have been made to combine the single frequency operation of SDLs with the intracavity pumping scheme for OPOs to generate broadly tunable, single frequency output from OPOs [11], the intracavity scheme imposes issues on the design of such systems. In this context, the broad gain bandwidth of the semiconductor material allows for parasitic parametric effects and crosstalk between the resonators to broaden the linewidth of the SDL and the OPO.…”

Section: Introductionmentioning

confidence: 99%

Advances in narrow-linewidth continuous wave semiconductor disk laser pumped optical parametric oscillators

Hempler

Robertson

Hamilton³

et al. 2012

SPIE Proceedings

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The paper reports on M Squared Lasers' recent work in the field of narrow-linewidth, continuous wave (CW) optical parametric oscillators (OPO) that utilise the semiconductor disk laser (SDL) format for intra-and extracavity pumping schemes. For the experimental investigation, InGaAs quantum well gain structures were employed to produce compact SDLs which were subsequently used to pump OPOs based on periodically poled lithium niobate (PPLN).Using the intracavity architecture, a compact, CW, narrow-linewidth OPO was developed, capable of delivering up to 250 mW of narrow-linewidth idler output power (at ~3.3 µm). The SDL maintained stable single longitudinal mode operation and the spectral bandwidth of the OPO output was measured to be <0.14nm. A full discussion of the experimental set-up and results will be presented, together with a review of the potential issues and limitations in pursuing the development of intracavity pumped, single frequency OPOs.In addition to the intracavity work, extracavity approaches will also be discussed and their performance compared to those produced from the intracavity device. For the purpose of pumping singly resonant extracavity PPLN OPOs, high power (>15W), single frequency SDLs were developed using single-and multichip configurations. The extracavity OPO pumped by these sources delivered up to 950 mW of idler output power, with a minimum threshold of 2.4 W and tuning range from 2.8 µm to 3.6 µm. Further details of the high power, single frequency SDLs as well as the extracavity OPO will be discussed, with specific focus on the advantages and disadvantages of multi-chip and single-chip arrangements for single frequency SDLs.

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Section: Introductionmentioning

confidence: 99%

Advances in narrow-linewidth continuous wave semiconductor disk laser pumped optical parametric oscillators

Hempler

Robertson

Hamilton³

et al. 2012

SPIE Proceedings

Self Cite

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“…While intracavity pumping of OPOs had previously been investigated for effi cient continuous-wave operation within conventional solid-state lasers (e.g., those based on neodymium-doped crystals), the authors demonstrated here that the short carrier lifetime of the SDL eliminated the problem of relaxation oscillations that had severely limited the practicality of these systems. Subsequently 133 The fi nal non-linear frequency conversion technique that we will discuss here, used for down-conversion, is intracavity Raman conversion. This is a χ 3 non-linear process, and as such was, until relatively recently, mainly associated with high-power Q-switched lasers.…”

Section: Non-linear Conversionmentioning

confidence: 99%

Semiconductor disk lasers (VECSELs)

Hastie¹,

Calvez²,

Dawson³

2013

Semiconductor Lasers

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“…Chen et al reported a narrow-linewidth PPLN-OPO with a laser linewidth of 0.06 nm at 1534 nm by using PPLN polarization-mode converters [6]. Nils et al achieved 300 mW output at 3.3 µm from a PPLN-OPO pumped by a diode disk laser; the laser linewidth was less than 0.2 nm [7]. Jiro et al reported a 30 Hz PPLN-OPO with an output energy of 61 mJ and a linewidth of less than 1.4 nm at 2128 nm [8].…”

Section: Introductionmentioning

confidence: 99%

A high-power narrow-linewidth optical parametric oscillator based on PPMgLN

et al. 2013

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A high-power and narrow-linewidth tunable optical parametric oscillator based on PPMgLN is presented. The phase matching type e → e + e is used to avoid the walk-off effect and utilize the maximum nonlinear coefficient d 33 (27.4 pm V −1 ) of the PPMgLN crystal (5 mol% MgO doped). When the pump power of the 1064 nm laser is 50 W and the temperature of the PPMgLN crystal is 100 • C, average output power of 15.8 W is obtained with a slope efficiency of 40.6%. The 1.655 µm signal and 2.98 µm idler output powers are 9.5 W and 6.3 W, respectively. The linewidth of the 1.655 µm signal laser is 1.00 nm before compression and 0.05 nm after compression. The compression ratio is 20. The linewidth of the 2.98 µm idler laser is within 0.30-0.63 nm based on theoretical analysis of the linewidth of the 1064 nm pump laser and 1.655 µm signal laser. The output wavelength can be tuned from 1.6 to 1.8 µm and from 3.1 to 2.7 µm by changing the temperature of the 31.2 µm PPMgLN crystal from 30 to 200 • C.

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Compact, narrow linewidth, continuous-wave, intracavity optical parametric oscillator pumped by a semiconductor disk laser

Cited by 3 publications

References 4 publications

Advances in narrow-linewidth continuous wave semiconductor disk laser pumped optical parametric oscillators

Advances in narrow-linewidth continuous wave semiconductor disk laser pumped optical parametric oscillators

Semiconductor disk lasers (VECSELs)

A high-power narrow-linewidth optical parametric oscillator based on PPMgLN

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