Compact Models of TFETs

Zhang, Lining; Chan, Mansun

doi:10.1007/978-3-319-31653-6_3

Cited by 6 publications

(6 citation statements)

References 37 publications

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“…In recent studies, semiconductor devices made from lowdimensional semiconductor structures are still showing their outstanding advantages, such as good durability, stable operation, or high-performance. [1][2][3][4][5][6][7][8][9][10] Thanks to the development of ultrashort laser pulses and modern experimental techniques, scientists continue to discover many new physical properties in low-dimensional structures. [11][12][13][14][15][16][17] These materials can be applied to produce modern devices, including memory devices with faster writing and longer storage of information, 14) quantum probes with great flexibility, 15,16) and high-performance photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

A study on quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires

Phuoc

Bao

Hien

et al. 2020

Jpn. J. Appl. Phys.

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This paper presents a theoretical investigation of quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires. A three-level model of excitons, including a ground state and two excited states, has been applied to derive the renormalized wavefunctions and the time-dependent absorption intensity of excitons when the system is irradiated by a strong pump laser resonating with the distance between the two excited-levels. Our results show that a periodic oscillation form of the absorption intensity, obvious evidence of the quantum beat behavior, has appeared. Furthermore, the mechanism of the generation, as well as the effects of the wire radius and the pump laser detuning on the frequency (period) and amplitude of quantum beats, have been explained in detail. These results suggest potential applications in the fabrication of some quantum computation devices.

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Section: Introductionmentioning

confidence: 99%

A study on quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires

Phuoc

Bao

Hien

et al. 2020

Jpn. J. Appl. Phys.

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“…The almost unchanged electrical properties and key parameters of the different diodes suggest the stable performance of the fabricated tunnel diodes. The stability of the device performance selected randomly further indicates the relatively good quality of the entire bond-ing interface between the transferred MoS 2 film and the Si wafer, [4,23] which benefits from the uniform and smooth transferred MoS 2 films without observable breakage confirmed by the specific analysis above. Voltage (V) The bilayer MoS 2 /Si tunnel diode is also demonstrated experimentally.…”

Section: With Mos2 Filmmentioning

confidence: 82%

MoS₂/Si tunnel diodes based on comprehensive transfer technique

Zhu¹,

Lv²,

Zhang³

et al. 2023

Chinese Phys. B

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Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D TFET is considered as one of the most promising low-power devices that can simultaneously obtain low OFF-state current (I OFF), high ON-state current (I ON) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by AFM, SEM, and Raman characterizations. Besides, the prominent NDR effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

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“…However, TFETs work by modulating tunneling between a source and the channel junction, which means that the performance of a TFET is highly sensitive to heat burden during fabrication processes like rapid thermal annealing (RTA) and PMA. 24) Regardless of their differences, many studies on TFETs reported the use of PMA conditions optimized for MOSFETs. Therefore, a need exists for PMA conditions specific for TFETs, although no satisfactory optimizations have been developed so far.…”

Section: Introductionmentioning

confidence: 99%

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

Song

Babu

et al. 2020

Jpn. J. Appl. Phys.

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Many attempts have been made to improve the performance of tunneling field-effect transistors (TFETs). Among these, post metal annealing (PMA) can induce enhanced device performance, but its application to TFETs has not been sufficiently explored. In this study, the temperature, time, atmosphere, and pressure conditions for the PMA of a TFET device are optimized. To evaluate if any loss in performance occurred after PMA, we tested the transistors' electrical parameters, specifically their subthreshold slopes and low-frequency noises at 10 Hz. Moreover, the interface trap charge density of the TFETs is extracted as a measure to evaluate their performance. As a result, lower temperatures and shorter PMA times are essential compromises, and the performances were improved under H 2 and D 2 -containing atmospheres. Furthermore, the benefit of having high gas pressures during PMA is noted, because as the number of hydrogen/deuterium atoms increases, more traps-removing surface-gas interactions can occur.

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Compact Models of TFETs

Cited by 6 publications

References 37 publications

A study on quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires

A study on quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires

MoS₂/Si tunnel diodes based on comprehensive transfer technique

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

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Compact Models of TFETs

Cited by 6 publications

References 37 publications

A study on quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires

A study on quantum beats of excitons in GaAs/AlGaAs circular cylindrical quantum wires

MoS2/Si tunnel diodes based on comprehensive transfer technique

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

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MoS₂/Si tunnel diodes based on comprehensive transfer technique