Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers

Andrews, J.M.; Grens, C.M.; Cressler, John D.

doi:10.1109/ted.2009.2021365

Cited by 25 publications

(6 citation statements)

References 13 publications

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“…In this sense, a methodology based on measurements and an empirical polynomial fit for the finger spacing dependence of the coupling has been presented in [5]. The latter methodology relies on additional thermal imaging equipment to determine the coupling and its accuracy is limited by the resolution of thermal imaging.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

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A strategy for compact modeling the static thermal coupling between the emitter fingers of SiGe heterojunction bipolar transistors (SiGe-HBTs) is described. An extraction methodology that includes the nonlinear temperature dependence of the thermal conductivity is introduced and applied to suitable test structures. The experimental results are used for calibrating a 3-D numerical solution of the equation for heat conduction based on a Green's function approach. The latter can then be employed for generating thermal coupling networks for arbitrary transistor configurations.

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Section: Introductionmentioning

confidence: 99%

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

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“…Thermal effects are deeply related to the electrical performance and overall reliability of the device. In addition to self-heating, each device operating at high power level heats up neighboring devices (thermal coupling or inter-device heating effects [5][6][7]). These factors, in combination with an increased density of transistors on a given chip, can affect the performance of the overall circuit [8].…”

mentioning

confidence: 99%

Characterization of mutual heating inside a SiGe ring oscillator

Weis

Santorelli

Ghosh

et al. 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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This paper reports on the electrical and thermal characterization of a state of the art SiGe ring oscillator (RO) with 2.2 ps gate delay fabricated in a Si/SiGe:C technology featuring f T and f max of ~300 GHz and ~400 GHz, respectively. The transistor model is verified through DC and RF characteristics taken from the same die as the circuit measurements. Excellent agreement between measurements and compact model simulation is shown. A simple method is presented that calculates the nonlinear circuit temperature rise in the local circuit area resulting from mutual heating of all active and passive components. Once taken into account the circuit temperature, the accuracy of circuit simulation is significantly improved.

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“…1 involves the use of VCVSs. In [8], use of VCVS is avoided and decoupling of self-heating node from the one representing the total temperature rise is recommended. However, such a model additionally requires the use of current meters.…”

Section: Model Formulation and Implementationmentioning

confidence: 99%

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs

Balanethiram

Chakravorty

D'Esposito

et al. 2015

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

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A computationally efficient model for static selfheating and thermal coupling in a multi-finger bipolar transistor is proposed. Compared to an existing state-of-the-art model, our model differs only in the implementation strategy keeping the physical basis intact. The formulated model is implemented in Verilog-A without using any voltage controlled voltage sources. Temperature dependence of the thermal resistances are considered within the framework of the model. The number of extra nodes in our model reduces to 2n from n 2 required in the stateof-the-art model with n as the number of emitter fingers in a transistor. The simulation results of our model are found to be identical with those of the state-of-the-art model demonstrating the capability of accurately considering the static self-heating and thermal coupling in a simple way. The model is found to accurately predict the measured data of a five-finger transistor. It is found that in high current operating regimes, our five finger transistor model simulates around 11% faster compared with the state-of-the-art model.

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Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers

Cited by 25 publications

References 13 publications

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Characterization of mutual heating inside a SiGe ring oscillator

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs

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