Circuit Design for Reliability 2014
DOI: 10.1007/978-1-4614-4078-9_6
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Compact Modeling of BTI for Circuit Reliability Analysis

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Cited by 6 publications
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“…Preliminarily, NBTI was considered the significant reliability issue but after introducing the high-k metal gate dielectric in deep nano-scale (< 45 nm) technologies [33], PBTI effects has also become an important aging issue. BTI mechanisms consist two phases [36]:…”
Section: B Bti Aging Mechanismmentioning
confidence: 99%
“…Preliminarily, NBTI was considered the significant reliability issue but after introducing the high-k metal gate dielectric in deep nano-scale (< 45 nm) technologies [33], PBTI effects has also become an important aging issue. BTI mechanisms consist two phases [36]:…”
Section: B Bti Aging Mechanismmentioning
confidence: 99%