Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses

Wang, You; Zhang, Yue; Deng, Erya; Klein, Jacques-Olivier; Naviner, Lírida Alves de Barros; Zhao, Weisheng

doi:10.1016/j.microrel.2014.07.019

Cited by 103 publications

(49 citation statements)

References 28 publications

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“…Thus, it is essential to investigate the effects of the temperature increase during current pulses. In this model, the thermal heating of MTJ is integrated as follows [19,20]:…”

Section: Temperature Fluctuation Due To Joule Heatingmentioning

confidence: 99%

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Compact thermal modeling of spin transfer torque magnetic tunnel junction

Wang

Cai

Naviner

et al. 2015

Microelectronics Reliability

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“…Thus, it is essential to investigate the effects of the temperature increase during current pulses. In this model, the thermal heating of MTJ is integrated as follows [19,20]:…”

Section: Temperature Fluctuation Due To Joule Heatingmentioning

confidence: 99%

“…In order to validate this model, we have conducted performance analysis including temperature dependence of switching delay, energy consumption using the conventional 1T-1M writing circuit and considering the MTJ lifetime model presented by [19]. As depicted in Fig.…”

Section: Impact Of Temperature On Mtj Based Writing and Reading Circuitsmentioning

confidence: 99%

Compact thermal modeling of spin transfer torque magnetic tunnel junction

Wang

Cai

Naviner

et al. 2015

Microelectronics Reliability

Self Cite

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“…NMOS transistors are bodybiased with 1 V supply voltage, whereas PMOS transistors body are connected to ground. The behavioral model of MTJ is described in Verilog-A language [20] [21]. The CMOS/MTJ hybrid circuits are analyzed with Cadence Virtuoso.…”

Section: A Stochastic Behavior Of Mtjmentioning

confidence: 99%

Stochastic computation with Spin Torque Transfer Magnetic Tunnel Junction

Naviner

Cai

Wang

et al. 2015

2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)

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Stochastic Computing (SC) with random bit streams has been used to replace binary radix encoding. SC-based logic cicuits take advantage of area minimization, fast and accurate operation and inherent fault tolerance. In this paper, the stochastic characteristics inherent in Spin Torque Transfer Magnetic Tunnel Junction (STT-MTJ) bring on an innovative stochastic number generator (SNM) circuit. The hybrid MOS-MTJ process allows to design a 4T1M structure SNM with 1.98μm*1.46μm layout area, using 28 nm ultra thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) technology. A case study of designed SNM is performed by polynomial function synthesis, which significantly reduces area. The proposed circuit also takes advantage of non-volatility and infinite endurance from STT-MTJs, which can be applied to reliability-aware circuits and systems 1 .

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“…When the dielectric breakdown (hard-breakdown) occurs at MTJ oxide barrier, the lifetime for MTJ around 1 nm thick barrier can be estimated to 10 years (at 400 mV operating voltage) [8]. For TDDB in FDSOI transistors, the breakdown voltage is as high as 2.4 V [15].…”

Section: Reliability Issuesmentioning

confidence: 99%

“…Previous reliability studies of STT-MTJ circuits (mainly designed with bulk-CMOS technology) focus on variability induced performance fluctuation or functional failure [7,8]. Aging mechanisms, such as hot carrier injection (HCI), negative bias temperature instability (NBTI) and time dependent dielectric breakdown (TDDB) can significantly degrade the performance parameters of integrated circuits [9,10].…”

Section: Introductionmentioning

confidence: 99%