Compact Low-Power-Consumption 28-Gbaud QPSK/16-QAM Integrated Silicon Photonic/Electronic Coherent Receiver

Zhang, Jing; Verbist, Jochem; Moeneclaey, Bart; Weerdenburg, John van; Uden, Roy van; Chen, H.; Campenhout, Joris Van; Okonkwo, Chigo; Yin, Xin; Bauwelinck, J.; Roelkens, Günther

doi:10.1109/jphot.2015.2505609

Cited by 15 publications

(16 citation statements)

References 22 publications

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“…At lowest gain (i.e. lowest RF) we reach a bandwidth of ~30 GHz in good agreement with what was simulated in [4]. As the germanium photodiodes have a very high bandwidth and a slow roll-off [4], we believe that the ICR bandwidth is mainly determined by the TIA frontends.…”

Section: Methodssupporting

confidence: 87%

“…As both the real-time oscilloscope and the DACs have a limited memory, the effect of longer PRBS on the receiver could not be investigated. Thanks to two 72 GSa/s high-speed DACs provided by MICRAM, we were able to significantly reduce the transmitter-based limitations from our previous experiments [4] and realize high quality transmission up to 40 GBaud. Amplified spontaneous emission (ASE) noise is added to the modulated light in a noise loading stage during OSNR measurements.…”

Section: Design and Setupmentioning

confidence: 99%

“…The grating couplers have an efficiency of -6.5 dB and a -1 dB bandwidth of 20 nm. The MMI was designed to have a phase error of less than 5° over the C-band [4]. The simulated common mode rejection ratio, taking into account typical fabrication tolerances, is better than -20 dB.…”

Section: Design and Setupmentioning

confidence: 99%

“…Furthermore, the high indexcontrast permits the realization of devices with very small footprint. Silicon ICRs with symbol rates up to 30 GBaud for QPSK and 28 GBaud for 16-QAM have been demonstrated using a single polarization receiver [4,5] and using a polarization division multiplexed (PDM) receiver [6][7][8][9]. An alternative implementation with a 120° optical hybrid using a 3x3 multimode-interferometer (MMI) instead of the traditional 90° hybrid was demonstrated in [10].…”

mentioning

confidence: 99%

“…Last year, [11] demonstrated a monolithic single-polarization ICR where the photonic devices were realized on the same chip as the transimpedance amplifiers (TIAs). Recently, we reported a single-polarization silicon coherent receiver packaged with a 2-channel SiGe TIA-array in [4], where we discussed the design of the photonic and electronic ICs and demonstrated 28 GBaud capability.…”

mentioning

confidence: 99%

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A 40-GBd QPSK/16-QAM Integrated Silicon Coherent Receiver

Verbist

Zhang

Moeneclaey

et al. 2016

IEEE Photon. Technol. Lett.

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Abstract-Through co-design of a dual SiGe transimpedance amplifier and an integrated silicon photonic circuit, we realized for the first time an ultra-compact and low-power silicon singlepolarization coherent receiver operating at 40 GBaud. A biterror rate of less than 3.8 × 10 -3 was obtained for an optical signal-to-noise ratio of 14 dB for QPSK modulation (80 Gb/s), and 26.5 dB for 16-QAM (160 Gb/s). We also demonstrate robust performance of the receiver over temperature and wavelength.

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Section: Methodssupporting

confidence: 87%

Section: Design and Setupmentioning

confidence: 99%

Section: Design and Setupmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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A 40-GBd QPSK/16-QAM Integrated Silicon Coherent Receiver

Verbist

Zhang

Moeneclaey

et al. 2016

IEEE Photon. Technol. Lett.

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Ultralow Crosstalk and Loss CMOS Compatible Silicon Waveguide Star-Crossings with Arbitrary Included Angles

Chen¹,

Wang²,

Zhang³

et al. 2018

ACS Photonics

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As the integration level of silicon photonics improves, using a large number of 2 × 2 crossings is seemingly inevitable. However, with the help of a multiports crossing, which has low crosstalk and loss, the number of crossings can be greatly reduced, then the integration density and routing flexibility can be enhanced. Here, we propose and demonstrate the novel 3 × 3, 4 × 4, 5 × 5 and 6 × 6 silicon waveguide star-crossings based on self-imaging. The star-crossings are fabrication compatible with the 180 nm commercial CMOS process. The fabricated devices show ultralow crosstalk and insertion loss. The crosstalk of those crossings are less than −50, −50, −49.2, and −48 dB, respectively, in C-band. The corresponding insertion loss are less than 0.067 dB, 0.075 dB, 0.081 and 0.133 dB, respectively. We also propose the high performance star-crossings with arbitrary angles, which can reduce the difficulty of the waveguide routing and further improve the integration density of photonics IC. The footprint and minimum angle of the proposed star-crossing are also discussed. The crossings have high fabrication tolerance, and will be widely used in the future integrated photonics.

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