Compact low loss and broadband hybrid plasmonic directional coupler

Alam, Md. Zahangir; Caspers, J. Niklas; Aitchison, J. S.; Mojahedi, Mo

doi:10.1364/oe.21.016029

Cited by 51 publications

(28 citation statements)

References 22 publications

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“…The minimum resistivity value of 0.024 X cm at 12.5 mol% Sn concatenation. This variation is close to those of the ITO films and ITO nanowires reported by previous works [13,32]. With these results, we assume that the preparation of the pure In 2 O 3 and Sn-doped In 2 O 3 thin sheets is available to rough estimate the intrinsic electrical properties of porous materials.…”

Section: Resultssupporting

confidence: 90%

Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks

Wang

Bin

2014

Appl. Phys. A

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This paper studies the effect of Sn doping on the morphological, structural, and electrical properties of the Sn-doping In 2 O 3 nanofiber networks. In 2 O 3 -based nanofibers with various relative concentration of Sn precursor (0-20 mol%) were fabricated through the electrospinning method. Scanning electron microscopy observations show that, depending on the relative concentration of SnCl 4 in the starting materials, the doped nanofibers with different morphologies, from smooth to corn-like and then to accidented, are fabricated. Transmission electron microscopy and X-ray diffraction analyses reveal that the Sn dopants influence the growth direction of seeds, resulting in doped nanoparticles having diverse shapes and sizes, which are critical for the formation of doped nanofiber with different morphology. From these nanofiber networks, we fabricated several thin sheets to characterize the effect of Sn concentration on the electrical resistivity. The resistivity of thin sheets decreased significantly before the doping concentration up to 12.5 mol%, and then increased slightly at a larger addition. This work will assist further understanding the formation of Sn-doped In 2 O 3 nanofibers and is expected to be extended to other transparent conductive oxides.

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Section: Resultssupporting

confidence: 90%

Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks

Wang

Bin

2014

Appl. Phys. A

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“…Generally, HPWs have the advantage of the long propagation length compared with DLSPPWs due to their low loss. Therefore, HPWs are used in several applications, such as an optical laser [8], polarization rotators [9,10,11,12], a wavelength filter [13], ring resonators [14,15,16], an optical polarizer [17], a directional coupler [18], a power splitter [19], and polarization splitters [20,21]. Since these plasmonic devices are fabricated on Si substrate together with optical devices based on silicon wire waveguides, the coupling between these two different waveguides are necessary for their integration.…”

Section: Introductionmentioning

confidence: 99%

A photonic-plasmonic mode converter using mode-coupling-based polarization rotation for metal-inserted silicon platform

Ishizaka

Nagai

Fujisawa

et al. 2017

IEICE Electron. Express

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We present a photonic-plasmonic mode converter using modecoupling-based polarization rotation for connecting a silicon wire and hybrid plasmonic waveguides on a metal-inserted silicon platform. By using the polarization rotator based on defect-introduced silicon wire waveguide, the proposed mode converter can convert the photonic TE mode into the hybrid plasmonic TM mode. At the beginning, to identify a cross-sectional structure for polarization conversion, we investigate the hybrid parameters that determine the degree of mode rotation using the two-dimensional vector finite element method. Next, using the three-dimensional vector finite element method, we investigate the conversion characteristics of the whole device including input and output ports. Numerical results show that the extinction ratio of 46 dB and the insertion loss of 0.36 dB are achieved. The tolerance of the defect is also numerically evaluated. Our proposed mode converter can reduce insertion losses compared to conventional mode converters based on a taper-introduced butt joint structure.

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“…Considering the photonic device altogether, directional couplers (DCs) are serves as a prime component to design the elementary part of optical circuits. Recently, several designs of directional couplers have been proposed by using plasmonic waveguides [14][15][16][17]. The major phenomenon of coupling of light within the DC is beating of even-odd modes.…”

Section: Introductionmentioning

confidence: 99%

Modeling of all-optical even and odd parity generator circuits using metal-insulator-metal plasmonic waveguides

2017

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Plasmonic metal-insulator-metal (MIM) waveguides sustain excellent property of confining the surface plasmons up to a deep subwavelength scale. In this paper, linear and S-shaped MIM waveguides are cascaded together to design the model of Mach-Zehnder interferometer (MZI). Nonlinear material has been used for switching of light across its output ports. The structures of even and odd parity generators are projected by cascading the MZIs. Parity generator and checker circuit are used for error correction and detection in an optical communication system. Study and analysis of proposed designs are carried out by using the MATLAB simulation and finite-differencetime-domain (FDTD) method.

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Compact low loss and broadband hybrid plasmonic directional coupler

Cited by 51 publications

References 22 publications

Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks

Effects of Sn doping on the morphology, structure, and electrical property of In2O3 nanofiber networks

A photonic-plasmonic mode converter using mode-coupling-based polarization rotation for metal-inserted silicon platform

Modeling of all-optical even and odd parity generator circuits using metal-insulator-metal plasmonic waveguides

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