Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Review of the design of power ultrasonic generator for piezoelectric transducer

“…Although WBG devices have many advantages over Si devices, the drift region of the WBG power device is usually narrower than that of the corresponding Si device with the same rated power, which allows WBG devices to possess smaller junction capacitance, gate resistance, and switching time constant [102] . However, during switching transients under high dv/dt, high di/dt, and high operating frequency conditions, the parasitic inductance of WBG devices tends to trigger voltage and current overshoots, high-frequency ringing noise, and electromagnetic interference (EMI) problems, which have a significant impact on reliably generating high-precision and high-resolution high-frequency ultrasonic signals [103] . The technologies solving the above problems mainly include active gate drive technology, modulation technology, damping technology, passive technology [91] , [104] , etc.…”

“…(b) High-frequency CCL of SiC device in double pulse test circuit (indicated by the red line). (c) Switching waveforms of switching transients of SiC MOSFET considering parasitic parameter [103] . …”

Mathematical Design and Analysis of Three-Phase Inverters: Different Wide Bandgap Semiconductor Technologies and DC-Link Capacitor Selection

“…where 𝑚 𝑖 represents the modulation index of the inverter controlled by the SPWVM. It has a maximum value of 1 and it can be calculated by (12). In (12), 𝑉 𝐿𝑖𝑛𝑒 and 𝑉 𝐷𝐶 represent the peak value of the line-to-line voltage and the dc-link voltage, respectively.…”

“…It has a maximum value of 1 and it can be calculated by (12). In (12), 𝑉 𝐿𝑖𝑛𝑒 and 𝑉 𝐷𝐶 represent the peak value of the line-to-line voltage and the dc-link voltage, respectively.…”

“…Several energy conversion solutions in medium voltage using 3.3 kV- [10], and 10 kV- [11] SiC MOSFET switches are discussed in references [10] and [11], respectively. The dynamic features of 1.2 kV SiC MOSFET switch are investigated in reference [12]. At very high temperatures, switch maintains exceptional dynamic properties.…”