Compact Electrothermal Modeling of an X-band MMIC

Luniya, Sonali R.; Batty, W.; Caccamesi, Vincent; Garcı́a, M.; Christoffersen, C.E.; Melamed, Samson; Davis, W. Rhett; Steer, M.B.

doi:10.1109/mwsym.2006.249698

Cited by 7 publications

(7 citation statements)

References 6 publications

(5 reference statements)

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“…The performance of the proposed analysis is compared with the previously available state‐variable transient analyses, types: Tran (uses a sparse‐matrix formulation, see Ref. [37]) and Tran2 (uses the formulation of Eq. (8), see Ref.…”

Section: Simulation Resultsmentioning

confidence: 99%

Transient simulation based on state variables and waves

Kabir

Christoffersen

Kriplani

2011

Int J RF and Microwave Comp Aid Eng

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This article reports a new method for transient analysis of nonlinear circuits based on nonlinear device state variables and waves at their ports. The method is based on relaxation and thus does not require large matrix decompositions if time step is constant. The use of waves results in guaranteed convergence for any linear passive circuit and some types of nonlinear circuits. Additionally, the formulation using waves ensures that nonlinear devices are always excited with a physically meaningful input, i.e., the amount of power transmitted to nonlinear devices is bounded. The method was implemented in the fREE-DA TM circuit simulator. The formulation, its properties, and a convergence analysis of the proposed method are presented first, followed by case studies. V C 2011 Wiley Periodicals, Inc.Int J RF and Microwave CAE 21:314-324, 2011.

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Section: Simulation Resultsmentioning

confidence: 99%

Transient simulation based on state variables and waves

Kabir

Christoffersen

Kriplani

2011

Int J RF and Microwave Comp Aid Eng

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“…(3) [7]. Results from Tran2 are assumed to be correct, as these analysis has been previously verified against measurements and other circuit simulators [9,10]. The performance of the proposed method for different circuits is summarized in Table 1.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Circuit 2 is shown in Fig. 3 and is composed of 5 MMIC LNA [9] each connected to a soliton line (Circuit 1) at the output stage, each LNA fed with a different input frequency. The size of the modified nodal admittance matrix (MNAM) in each circuit are given in the table to give an idea of the problem size.…”

Section: Simulation Resultsmentioning

confidence: 99%

Wave-based transient analysis using block Newton-Jacobi

Kabir

Christoffersen

2011

2011 24th Canadian Conference on Electrical and Computer Engineering(CCECE)

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A recently introduced wave-based transient analysis uses relaxation and thus does not require large matrix decompositions at each nonlinear iteration. The use of waves results in guaranteed convergence for any linear passive circuit and some types of nonlinear circuits, but the convergence rate can not be controlled. In this work, the wave-based transient analysis is re-formulated using a block Newton-Jacobi approach and the convergence properties of the original and new formulations are compared with the simulation of two microwave circuits.

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“…To overcome the computational expense, 'weakly-coupled' approaches have been defined where electromagnetic simulation results (through S-parameters), thermal models (through a thermal impedance matrix), and nonlinear electrothermal transistor models are coupled in the netlist of a circuit simulator. This provides a comprehensive description of the transistor for computationally efficient simulation [6]- [8], [12], [18].…”

Section: Introductionmentioning

confidence: 99%

Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen¹,

Wood

Bridges³

et al. 2012

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bondwire arrays connecting the die to the package leads. The effects of three different gate bondpad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behaviour of the large-die LDMOS power field-effect transistor (FET).Index Terms-Global modeling, electrothermal, laterallydiffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET).

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Compact Electrothermal Modeling of an X-band MMIC

Cited by 7 publications

References 6 publications

Transient simulation based on state variables and waves

Transient simulation based on state variables and waves

Wave-based transient analysis using block Newton-Jacobi

Multiphysics Modeling of RF and Microwave High-Power Transistors

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