Compact dual-channel radio frequency power sensor for solid state amplifiers

Sharma, Deepak Kumar; Jain, Akhilesh; Pathak, Kriti; Lad, M.

doi:10.1016/j.nima.2019.162559

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…In the mid-20th century, the tunneling effect attracted widespread interest in semiconductor devices and quantum mechanics. In semiconductor devices, the tunneling effect is important for the design and manufacture of tunneling diodes, quantum tunneling devices such as GaAs/AlAs diodes [3], RF power sensors [4], etc. With the development of nanotechnology, research on electron transport at the nanoscale [5] has become increasingly important.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Electron Double Barrier Tunneling Based on Python

2024

HSET

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Tunneling is a common phenomenon in microphysics, and resonant tunneling is a tunneling phenomenon under special conditions. Double barrier tunneling is an important quantum mechanical phenomenon, which has important application and research value in condensed matter physics, semiconductor devices, quantum mechanics, and nanotechnology. This study takes the double barrier as an example to observe electron tunneling and find out the influence of different parameters on the tunneling effect. In this study, the wave function is calculated by using the method of Schrodinger equation and transpose matrix, and the image is drawn by Python and numerical operation. In this study, it is found that the barrier width is inversely proportional to the transmittance, and the transmittance and reflectance will change periodically with the distance between the two barriers, and the electrons will reach full transmission at a certain incident energy value. Studying the characteristics and mechanisms of double barrier tunneling helps develop new quantum technologies and devices and promotes technological innovation in related fields.

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Section: Introductionmentioning

confidence: 99%

Analysis of Electron Double Barrier Tunneling Based on Python

2024

HSET

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High-power solid-state amplifier for superconducting radio frequency cavity test facility

Jain

Sharma

Gupta

et al. 2021

Review of Scientific Instruments

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A horizontal test facility is set up at the Raja Ramanna Centre for Advanced Technology to test the superconducting radio frequency dressed cavities. Along with the cryomodule, control instrumentation, and the power coupler, this facility incorporates a high-power solid-state amplifier for establishing the desired cavity voltage gradient during the testing. This article describes the design, construction, rigorous testing, and measured results of this high-power solid-state radio frequency amplifier and its constituent components. Its maximum output power is 36 kW (average) at the operating frequency of 650 MHz. Its main features are its modular and scalable design with in-house developed constituent components. These components include 500 W, 20 dB gain modules, novel two-tier radial dividers, combiners, power sensors, and aperture-coupled directional couplers. Their excellent reprise performance for the multiple quantities confirms the design methodology presented here. The measured wall plug efficiency of this 36 kW amplifier is 43.6%, and its power gain is 86 dB. The designed radial combiner is highly efficient (power-combining efficiency of 98.4%), and the directional coupler exhibits a very low loss (insertion loss of 0.05 dB).

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