“…This interaction, known as the proximity effect, could be used to spin polarize the electrons within a 2D transistor channel to create a 2D spin fieldeffect transistor [20, 31, 38-40, 91, 114, 115]. Furthermore, utilizing the proximity effect at the interface with a magnetoelectric antiferromagnet with net boundary magnetization, such as Cr 2 O 3 [115][116][117][118][119][120], would provide voltage controlled magneto-electric switching in MTJs [31,37,40,43,45,46], AFSOR logic [20,31,38,39,44], and spin FETs [20,31,[38][39][40]. Devices based on this antiferromagnetic switching would offer substantial advantages in switching speed and power consumption over ferromagnetic spintronic devices [31,39].…”