Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structures

Abstract

We discuss the application of a novel class of device, the magneto-electric magnetic tunnel junction (ME-MTJ) to realize a variety of computational functions, including majority logic and the XNOR/XOR gate. We also develop a compact model to describe the operation of these devices, which function by utilizing the phenomenon of 'voltage-controlled magnetism' to switch the operational state of MTJs. The model breaks down the switching process into three key stages of operation: electrical-to-magnetic conversion, magnetization transfer, and final-state readout. Estimates for the switching energy and delay of these devices, obtained from this compact model, reveal significant improvements in both of these parameters when compared to conventional MTJs switched by spin-transfer-torque. In fact, the capacity to use the ME-MTJ to implement complex logical operations within a single device allows its energy costs to even approach those of low-power CMOS. The added benefits of non-volatility and compact circuit footprint, combined with their potential for heterogeneous integration with CMOS, make the ME devices of considerable interest for post-CMOS technology.

Direct measurements of proximity induced spin polarization in 2D systems

“…This interaction, known as the proximity effect, could be used to spin polarize the electrons within a 2D transistor channel to create a 2D spin fieldeffect transistor [20, 31, 38-40, 91, 114, 115]. Furthermore, utilizing the proximity effect at the interface with a magnetoelectric antiferromagnet with net boundary magnetization, such as Cr 2 O 3 [115][116][117][118][119][120], would provide voltage controlled magneto-electric switching in MTJs [31,37,40,43,45,46], AFSOR logic [20,31,38,39,44], and spin FETs [20,31,[38][39][40]. Devices based on this antiferromagnetic switching would offer substantial advantages in switching speed and power consumption over ferromagnetic spintronic devices [31,39].…”

MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic

“…8. In addition, ME based logic devices have been explored in refs 9,10. The ME logic presented in ref.…”

“…In ref. 10, an XOR device was proposed, however details of cascading and the complexity of the required cascading circuits is missing. Recently, a spin logic based on magneto-electric switching and the Inverse Rashba Edelstein effect was proposed in ref.…”

“…On the other hand, non-volatile logic based on magnetic tunnel junctions (MTJs) embedded within CMOS logic circuits were explored in [8]. In addition, ME based logic devices have been explored in [9], [10]. The ME logic presented in [9] suffers from the requirement of a complex DC (direct current) bridge including three resistors for cascading.…”

“…The ME logic presented in [9] suffers from the requirement of a complex DC (direct current) bridge including three resistors for cascading. In [10], an XOR device was proposed, however details of cascading and the complexity of the required cascading circuits is missing. Recently, a spin logic based on magneto-electric switching and the Inverse Rashba Edelstein effect was proposed in [11].…”