Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

Yigletu, Fetene Mulugeta; Khandelwal, Sourabh; Fjeldly, Tor A.; Iñı́guez, Benjamı́n

doi:10.1109/ted.2013.2283525

Cited by 84 publications

(61 citation statements)

References 15 publications

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“…An analytical model for intrinsic capacitance in GaN HEMT has been developed by considering the parasitic components . Closed form charge‐based I‐V and C‐V characteristics are developed for GaN‐based MODFETs . The effect of structural parameters on 2DEG density and C‐V characteristics is demonstrated through numerical simulations…”

Section: Introductionmentioning

confidence: 99%

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Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

Amarnath

Swain

Lenka

2017

Int J Numerical Modelling

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In this paper, an analytical model for intrinsic capacitance is developed by estimating 2-dimensional electron gas density inside the triangular quantum well in AlInN/GaN metal oxide semiconductor high-electron mobility transistors by considering gate charge and through self-consistent solution of Poisson and Schrödinger equations. The charge separation method is applied to develop the intrinsic terminal charges and then the intrinsic capacitances accordingly. In order to validate the developed model, the results are compared with TCAD device simulation results. 1-4 It provides high 2-dimensional electron gas (2DEG) density along with high-electron mobility, which makes it very suitable for high-frequency applications. Along with the significant device development and performance improvements in III-Nitride-based devices, analytical and numerical models are highly desirable to validate the device. So in this work, capacitance modeling of AlInN/GaN MOSHEMT is emphasized for reliable and accurate device performance in mm and sub-mm wave regime. An analytical model for intrinsic capacitance in GaN HEMT has been developed by considering the parasitic components. 5 Closed form charge-based I-V and C-V characteristics are developed for GaN-based MODFETs. 6-9 The effect of structural parameters on 2DEG density and C-V characteristics is demonstrated through numerical simulations. 10Recently, Jena et al developed the gate capacitance model for MOSHEMT device structure by considering the quantum capacitance.11,12 However, to date, there is no model present in the literature explaining the intrinsic capacitances formed in AlInN MOSHEMTs. Therefore, in this paper, gate, drain. and source terminal charges are modeled and the corresponding intrinsic capacitances in AlInN/GaN MOSHEMT are obtained. Section 2 describes the device structure, simulation setup and model development. In Section 3, results are discussed. Finally, the paper is concluded in Section 4. | MODEL DEVELOPMENTThe schematic view of AlInN/GaN MOSHEMT structure used to develop the compact analytical intrinsic capacitance model is shown in Figure 1

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Section: Introductionmentioning

confidence: 99%

“…5 Closed form charge-based I-V and C-V characteristics are developed for GaN-based MODFETs. [6][7][8][9] The effect of structural parameters on 2DEG density and C-V characteristics is demonstrated through numerical simulations. 10 Recently, Jena et al developed the gate capacitance model for MOSHEMT device structure by considering the quantum capacitance.…”

mentioning

confidence: 99%

Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

Amarnath

Swain

Lenka

2017

Int J Numerical Modelling

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“…GaN-based high electron mobility transitors (HEMTs) are the most preferred devices for high-power and high-frequency applications due to their suitable material properties such as high breakdown voltage, high saturation velocity, low effective mass, high thermal conductivity and high two-dimensional electron gas (2DEG) density of the order of 10 13 cm −2 at the heterointerface [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The MOS capacitor formed in MOSHEMT has equivalent gate capacitance which is the series combination of oxide capacitance (C ox ) and inversion-layer capacitance (C inv ) [2]. The inversion-layer capacitance is inherent to all MOSHEMT structures and this capacitance has a significant influence on the performance of scaled-down devices with thin gate oxide [3]. The gate capacitance determines the RF performance and propagation delay in MOSHEMT which is limited by the inversion-layer capacitance.…”

Section: Introductionmentioning

confidence: 99%

“…The gate capacitance determines the RF performance and propagation delay in MOSHEMT which is limited by the inversion-layer capacitance. However, the inversionlayer capacitance is primarily contributed by the quantum capacitance (QC) formed in the 2DEG [3]. Therefore, in this context the researchers are keen to observe the influence of variation of oxide thickness on threshold voltage and gate capacitance relating QC and hence have developed a mathematical model which is presented in this paper.…”

Section: Introductionmentioning

confidence: 99%

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Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

2015

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In this paper, we have developed a mathematical model to predict the behaviour of gate capacitance and threshold voltage with nanoscale variation of oxide thickness in AlInN/GaN and AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). The results obtained from the model are compared with the TCAD simulation results to validate the model. It is observed that AlInN/GaN MOSHEMT has an advantage of significant decrease in gate capacitance up to 0.0079 pF/μm 2 with increase in oxide thickness up to 5 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance in AlInN/GaN MOSHEMT reduces the propagation delay and hence improves the RF performance of the device.

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Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices

Jena

Swain

Lenka

2015

Int J Numerical Modelling

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In this paper, a charge control model is developed for AlGaN/GaN High Electron Mobility Transistor (HEMT) and Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) by considering the triangular potential well in the two-dimensional electron gas (2DEG) and simulated with MATLAB. The obtained results from the developed model are compared with the experimental data for drain current, transconductance, gate capacitance and threshold voltage of both devices. The physics-based models for 2DEG charge density, threshold voltage and gate capacitance have been developed. By using these developed models, the drain current for both linear and saturation modes is derived. The predicted threshold voltage with the variation of barrier thickness has been plotted. A positive threshold voltage can be obtained by decreasing the barrier thickness that builds up the foundation for enhancement mode MOSHEMTs. The predicted C-V, I d -V gs , I d -V ds and transconductance characteristics show an excellent agreement with the experimental results from the literature and hence validate the developed model. The results clearly establish the potential of using AlGaN/GaN MOSHEMT approach for high power microwave and switching applications.

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Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

Cited by 84 publications

References 15 publications

Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT

Impact of oxide thickness on gate capacitance – Modelling and comparative analysis of GaN-based MOSHEMTs

Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices

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