2005
DOI: 10.1063/1.2001665
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Compact and transferable threefold evaporator for molecular beam epitaxy in ultrahigh vacuum

Abstract: A very compact molecular beam epitaxy (MBE) source is presented. It contains three Knudsen-type crucibles, two resistively and one electron bombardment heated. An efficient water cooling is implemented to allow MBE deposition under ultrahigh-vacuum conditions. Due to its small size, the evaporator fits inside a DN 36 CF T-piece which makes a separate bakeout possible. Refills of the crucibles as well as changes of the source materials and even repairs of the source can be carried out within a few hours without… Show more

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Cited by 37 publications
(10 citation statements)
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“…After cleaning via direct current heating up to 1250°C in several short flash-anneal cycles, the sample was held at an elevated temperature of 650°C. Au was deposited from an electron beam-heated graphite crucible 25 followed by a post annealing step at 850°C 9 . Subsequently the sample was rapidly cooled to liquid nitrogen temperatures.…”
mentioning
confidence: 99%
“…After cleaning via direct current heating up to 1250°C in several short flash-anneal cycles, the sample was held at an elevated temperature of 650°C. Au was deposited from an electron beam-heated graphite crucible 25 followed by a post annealing step at 850°C 9 . Subsequently the sample was rapidly cooled to liquid nitrogen temperatures.…”
mentioning
confidence: 99%
“…Ag is deposited from a home-made transferable evaporation cell with an e-beam heated molybdenum crucible. 21,22 In addition to single-crystalline Ag(111) islands, in the temperature range close to 500 C, also bi-crystalline islands form by self-assembly. 19 They are a composition of a Ag(111) part and a Ag(001) part, which can be identified easily in PEEM by their different photoemission yield.…”
Section: Methodsmentioning
confidence: 99%
“…Prior to deposition the sample was degassed at 650 • C for several hours. The sample was cleaned in several short flash-anneal cycles by heating via direct current to 1250 • C. An amount of 0.48 ML (monolayer, referred to the atomic density of a Si(111) surface, i.e., 1 ML = 7.83 • 10 14 atoms/cm 2 ) Au was deposited from an electron beam heated graphite crucible [17] at a substrate temperature of 650 • C. The deposition was fol-lowed by a post annealing step [18] at 850 • C for several seconds and subsequent rapid cooling to a temperature of T = 60 K or T = 80 K, respectively. Figure 1 (a,b) show a schematic structure model of the Si(553)-Au system.…”
Section: Methods and Sample Systemmentioning
confidence: 99%