Compact and Low Power 11T-2MTJ Non-Volatile Ternary Content Addressable Memory Cell with High Sense Margin

Shaban, Ahmed; Ahmad, Sayeed; Alam, Naushad; Hasan, Mohd.

doi:10.1166/jolpe.2019.1608

Journal of Low Power Electronics

2019

DOI: 10.1166/jolpe.2019.1608

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Compact and Low Power 11T-2MTJ Non-Volatile Ternary Content Addressable Memory Cell with High Sense Margin

Ahmed Shaban¹,

Sayeed Ahmad²,

Naushad Alam³

et al.

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Compact and Low Power 11T-2MTJ Non-Volatile Ternary Content Addressable Memory Cell with High Sense Margin

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