Compact and Energy-Efficient Forward-Biased PN Silicon Mach-Zehnder Modulator

Dev, Sourav; Singh, Karanveer; Hosseini, Reza; Misra, Arijit; Catuneanu, Mircea; Preuler, Stefan; Schneider, Thomas; Jamshidi, Kambiz

doi:10.1109/jphot.2022.3152612

Cited by 9 publications

(8 citation statements)

References 35 publications

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“…An overview of forward-biased ultra-compact modulators with high ER along with low VπL is presented in Table I. The presented modulator can achieve a high extinction ratio (ER) of 30 dB, which is very close to the DC ER of our previously reported forward-biased modulator (33 dB but with a 10 times longer active phase shifter length [20]) and 7 dB higher compared to other reported modulators. We also demonstrate that our modulator can transmit data with a bitrate of 5 Gb/s.…”

Section: Introductionsupporting

confidence: 61%

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Energy-Efficient Forward-Biased PIN Silicon Mach–Zehnder Modulator With 50 μm Active Phase Shifter Length

Dev,

Singh,

Catuneanu

et al. 2024

IEEE Access

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We present the design performance validation of an energy-efficient silicon Mach-Zehnder modulator (MZM) with a forward-biased PIN junction by simulation and experiment. With a length of 50 µm, the presented MZM exhibits at least four times smaller form factor for the active phase-shifter than the state-of-the-art. Furthermore, we recorded a remarkably low VπL of only 0.0025 V×cm. By thermal tuning of an additional heater, segmented with the phase shifter, the measured DC extinction ratio of the MZM was 30 dB. Non-return-to-zero data transmission up to 5 Gb/s and the generation of sinc-shaped Nyquist pulse sequences with a bandwidth of 12 GHz is demonstrated. The very small footprint and power consumption make the presented MZM an ideal choice for various applications like Nyquist pulse generation, parallel analog signal processing, arbitrary waveform generation, etc.

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Section: Introductionsupporting

confidence: 61%

“…However, they need large-scale integration. To satisfy these requirements, forward-biased MZMs become advantageous because they offer low power consumption as well as low insertion loss (IL) [19][20][21][22][23][24][25]. Forward-biased modulators are also comparatively smaller in size and thus can be helpful for large-scale integration.…”

Section: Introductionmentioning

confidence: 99%

Energy-Efficient Forward-Biased PIN Silicon Mach–Zehnder Modulator With 50 μm Active Phase Shifter Length

Dev,

Singh,

Catuneanu

et al. 2024

IEEE Access

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“…By applying the voltage on the forward-biased junction, carriers will be injected into the WG. Therefore, the concentration of free electrons and holes will be changed and hence, the refractive index and accordingly loss coefficient will be changed [22][23][24].…”

Section: Device Characterizationmentioning

confidence: 99%

Low Power, Compact Integrated Photonic Sampler Based on a Silicon Ring Modulator

et al. 2022

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Sampling is the primary functional step of an analogue to digital conversion, required for sensing, measurement, signal processing, metrology, and various data communication applications. Here we present, for the first time, to the best of our knowledge, the optical sampling of different microwave signals with sinc-pulse sequences with a very compact integrated silicon photonics ring modulator. By a simple time interleaving with three branches, the employed ring modulator enables ultra-compact photonic integrated analog to digital converters with a sampling rate of three times the RF bandwidth of itself and of the used photodetector and electronic devices. Therefore, its analogue bandwidth is 50% higher than the RF bandwidth of the incorporated electronics and photonics. Thus, the method might enable high-bandwidth analogue to digital converters with ultracompact footprint and lower power consumption for future communication systems, sensors, and measurement devices.

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“…Among them, the most common method is to exploit the plasma dispersion effect of silicon [8][9][10][11][12][13][14][15] since it does not need to integrate other materials like lithium niobate (LN) [16][17][18][19] or electro-optical polymer [20][21][22]. The refractive index of silicon varies with the carrier concentration inside the material, which is mainly achieved through two methods: carrier depletion (reversed-biased) [23][24][25][26][27] and carrier injection (forwardbiased) [28][29][30][31]. To date, in the field of high-speed transmission, the research on carrierdepletion-based MZMs is far more than carrier-injection-based MZMs for high-speed transmission.…”

Section: Introductionmentioning

confidence: 99%

A novel silicon forward-biased PIN Mach-Zehnder modulator with two operating states

Yu,

tu,

Huang

et al. 2023

Preprint

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In this paper, we demonstrated a silicon forward-biased positive intrinsic negative (PIN) Mach-Zehnder modulator (MZM), which has two operating states of high efficiency and high speed. The two operating states are switched by changing the position where the electric signal is loaded. The modulator incorporates a PIN phase shifter integrated with the passive resistance and capacitance (RC) equalizer (PIN-RC), which expands the electro-optic (E-O) bandwidth by equalizing it with modulation efficiency. The fabricated modulator exhibited a low insertion loss of 1.29 dB in two operating states, and a compact design with a phase shifter length of 500 μm. The modulation efficiencies are 0.0088 V·cm and 1.43 V·cm, and the corresponding 3 dB E-O bandwidths are 200 MHz and 7 GHz, respectively. The high-speed modulation performance of the modulator was confirmed by non-return-to-zero (NRZ) modulation with a data rate of 15 Gbps without any pre-emphasis or post-processing. The presented modulator has great potential in optical computing, high-speed data transmission, and high-performance optical switch arrays.

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Compact and Energy-Efficient Forward-Biased PN Silicon Mach-Zehnder Modulator

Cited by 9 publications

References 35 publications

Energy-Efficient Forward-Biased PIN Silicon Mach–Zehnder Modulator With 50 μm Active Phase Shifter Length

Energy-Efficient Forward-Biased PIN Silicon Mach–Zehnder Modulator With 50 μm Active Phase Shifter Length

Low Power, Compact Integrated Photonic Sampler Based on a Silicon Ring Modulator

A novel silicon forward-biased PIN Mach-Zehnder modulator with two operating states

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