Commercialization of SCALPEL masks

Farrow, R. C.; Novembre, Anthony E.; Peabody, Milton L.; Kasica, Richard; Blakey, Myrtle I.; Liddle, J. Alexander; Werder, K.; DeMarco, Robert; Ocola, Leonidas E.; Rutberg, L.; Saunders, Thomas E.; Unruh, James F.; Qian, Feng; Smith, Matthew H.

doi:10.1116/1.590310

Cited by 8 publications

(11 citation statements)

References 8 publications

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“…1͒. 3,4 The first is stencil masks where the clear openings are etched through the membrane, and the membrane itself serves as the opaque scatterer layer. The second is thin membrane scattering masks where a very thin membrane serves as the clear field, and a heavy atomic weight patterned absorber on top of the membrane serves as the scatterer layer.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of masks for electron-beam projection lithography

Lercel

Magg

Barrett

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Masks for electron projection lithography ͑EPL͒ require the use of thin membranes for either stencil or all membrane scattering masks. The processes of forming the printable patterns before or after the membrane etch step are compared for EPL stencil masks. Image size uniformity and image placement distortions are characterized and indicate, with appropriate process optimization, either process flow is viable for EPL mask manufacture. Image size uniformity within individual membranes has achieved Ͻ10 nm ͑3͒ with the membrane flow process, and the magnitude of process induced image placement distortions is similar for both process flows. Stencil masks have also been fabricated with support rings. The masks with support rings show more repeatable absolute image placement, but the image placement distortion due to patterning is nearly identical for masks with or without a support ring.

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Section: Introductionmentioning

confidence: 99%

Fabrication of masks for electron-beam projection lithography

Lercel

Magg

Barrett

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…4.1.4, which gives the largest estimation of the errors. Thus we obtain D = Asin ωt (4) where the ω is the angular frequency of the oscillation. The relationship between the standard deviation of a single oscillation and its amplitude can be expressed as the following.…”

Section: Inluence On Ol Accuracymentioning

confidence: 99%

“…One is stencil type 1, 2 and the other is continuous membrane type. 3,4 Stencil type is preferable from the view point of resolution required to the device node below 70 nm because it's free from the chromatic aberration caused by the electron energy loss due to plasmon excitation in continuous membrane. 5 However, the mechanical structure of the stencil type poses several concerns.…”

Section: Introductionmentioning

confidence: 99%

Dynamic image placement accuracy of a stencil mask

Takenaka¹,

Yamashita²,

Takahashi³

et al. 2002

Emerging Lithographic Technologies VI

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Stencil masks are preferable for EPL (Electron-beam Projection Lithography) from the view point of resolution because it's free from the chromatic aberration caused by the electron energy loss in continuous membrane. However, its mechanical structure poses several concerns. Dynamic image placement (IP) accuracy is one of the essential concerns because patterns on the stencil mask are defined by free-standing Si structures. Moreover the whole pattern areas are supported by fine Si grid structures. The step-and-scan motion of EPL tools is expected to cause dynamic displacements of these fragile structures, which lead to deterioration of resolution, critical dimension (CD) and overlay (OL) accuracies. Two kinds of the dynamic displacements on an EPL stencil mask were estimated by simulations. One is the vibration of the free-standing structures and the other is the dynamic distortion of the whole pattern area. The maximum acceleration of 5 G was assumed in the simulations according to a throughput estimation. The free-standing structures are modeled into cantilever beams and both-end-fixed beams. It was found that the vibration of the structures could be suppressed below the amplitude of 1 nm by limiting the beam length. The limitations were practical ones for complementary split of mask layout. The whole pattern area was modeled into a simple grid structure. It was found that the maximum dynamic displacement was less than 7 nm. The OL accuracy was estimated including those dynamic displacements down to 35 nm node. The results show that the dynamic displacements of the EPL stencil masks would little affect the OL accuracy. The stencil mask is applicable for device fabrication at 70 nm node and below.

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“…Application of molecular beam epitaxy (MBE) possessing unique properties of growing semiconductor interfaces with a sub-monolayer control gives a good chance for practical realization of this idea. Among the nearly lattice-matched III-V/II-VI heteropairs, GaAs/ZnSe (∆a/a = 0.26%) [2] and InSb/CdTe (∆a/a = 0.04%) [3] have been most exploited so far, the former for ZnSe-based blue-green laser diodes and the latter for far-IR photodetectors, and, hence, possessed a well developed epitaxial technology.…”

Section: Introductionmentioning

confidence: 99%

II–VI/III–V structures with a heterovalent interface in the active region: New opportunities in band engineering

Ivanov¹,

Kaygorodov²,

Sorokin³

et al. 2004

phys. stat. sol. (c)

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The paper presents an overview of recent activity in fabrication by molecular beam epitaxy and study of AlGaSbAs/InAs/(ZnTe)/Cd(Mg)Se hybrid pseudomorphic heterostructures with an InAs/II-VI heterovalent interface either in the active region (in case of mid-IR laser diodes) or in the InAs quantum well (QW). Different approaches to fabrication of the defect-free InAs/II-VI interface are discussed, as well as their effect on crystalline properties and an electronic band structure at the interface. The hybrid mid-IR laser diodes are characterized by a dramatically improved carrier (hole) and optical confinement in the InAs-based active region. Clear confining effects are observed in the photoluminescence from a ~7-nmthick InAs QW with CdMgSe and AlAsSb barriers. An existence of 2D electron gas in such QWs of ~16 nm in a thickness is proved by observation of Shubnikov-de Haas oscillations. The obtained results are prospective both for mid-IR optoelectronics and spintronics.

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Commercialization of SCALPEL masks

Cited by 8 publications

References 8 publications

Fabrication of masks for electron-beam projection lithography

Fabrication of masks for electron-beam projection lithography

Dynamic image placement accuracy of a stencil mask

II–VI/III–V structures with a heterovalent interface in the active region: New opportunities in band engineering

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