Comment on “Theoretical analysis of high-field transport in graphene on a substrate” [J. Appl. Phys. <b>116</b>, 034507 (2014)]

Tan, Michael Loong Peng; Arora, Vijay K.

doi:10.1063/1.4904849

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“…11,31 Even though the bias voltage was not high enough to observe the saturation behavior in I-V characteristics, the saturation velocity of FET with MLG electrode is expected to be substantially lower. 32 There is still a lot of room to improve the transistor performances during device preparation processes, such as controlling quality of SWNT, reducing contact resistance, and so on.…”

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confidence: 99%

Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

Seo

Kim

et al. 2015

Applied Physics Letters

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A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

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confidence: 99%