Comment on “Optical Characterization of Si<sub> 1 - x</sub>C<sub>x</sub>/Si    (0≤ x ≤0.014)  Semiconductor Alloys"

Zollner, Stefan; Junge, Kelly; Lange, R.; Affolder, A.

doi:10.1143/jjap.35.5684

Cited by 3 publications

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References 18 publications

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“…While our numerical procedure removes most of the interference effects at the substrate/epilayer interface, the formalism may leave some artefacts behind, such as the structure seen at 3 eV. It is unlikely that Si 1−y C y alloys would have a critical point at such a low energy [7,17].…”

Section: Experimental Procedures and Optical Constants Of Si 1−y C Y ...mentioning

confidence: 99%

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si_1−yC_yalloys on Si (0 0 1)

Zollner¹,

Liu

Zaumseil

et al. 2006

Semicond. Sci. Technol.

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The complex dielectric functions (hω) from 0.74 to 6.6 eV of pseudomorphically strained Si 1−y C y (0 < y < 0.014) alloys grown on Si (0 0 1) were determined using spectroscopic ellipsometry. Interference effects due to surface overlayers and multiple reflections at the substrate/epilayer interface were subtracted. We also report the critical-point parameters (amplitude, energy, broadening, phase angle and dimension) of the E 0 , E 1 , E 2 and E 1 interband transitions. While the E 1 energy gap increases linearly with increasing C content, in good agreement with a continuum elasticity model (taking into account the effects of biaxial stress and alloying with C based on a linear interpolation of the Si and diamond E 1 energies), the E 0 gap stays approximately constant and the E 2 gap shows a significant decrease. The amplitudes of all critical points decrease by about 50% and the broadenings increase by about 50-80% when adding 1.4% C. The phase angles remain approximately the same as in Si, except for E 1 . The changes in the critical-point parameters can be understood due to the lattice relaxation (four Si nearest neighbours move towards C) and the strong alloy scattering, with obvious implications for ultrafast or high-field electronic transport in such alloys. Since the Si 1−y C y alloys are under a tensile biaxial stress, the measured ordinary dielectric function is also affected by piezo-optical effects, which were calculated using literature data for bulk Si.

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Section: Experimental Procedures and Optical Constants Of Si 1−y C Y ...mentioning

confidence: 99%

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si_1−yC_yalloys on Si (0 0 1)

Zollner¹,

Liu

Zaumseil

et al. 2006

Semicond. Sci. Technol.

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Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)

et al. 2013

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Reply to “Comment on `Optical Characterization of Si_1-xC_x/Si ( 0≤x ≤0.014) Semiconductor Alloys' ”

Lee

1996

Jpn. J. Appl. Phys.

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Based on the previous comment by Zollner et al.., we discuss the possibility that the double feature in the derivative spectra of the dielectric functions of Si1- x C x /Si (0≤x≤0.014) and Si0.924- x Ge0.076C x /Si (0≤x≤0.014) alloys grown using solid phase epitaxy may come from interference phenomenon. We emphasize that the argument does not change the main content of our previous reports.

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Comment on “Optical Characterization of Si_{1 - x}C_x/Si (0≤ x ≤0.014) Semiconductor Alloys"

Cited by 3 publications

References 18 publications

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si_1−yC_yalloys on Si (0 0 1)

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si_1−yC_yalloys on Si (0 0 1)

Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)

Reply to “Comment on `Optical Characterization of Si_1-xC_x/Si ( 0≤x ≤0.014) Semiconductor Alloys' ”

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Comment on “Optical Characterization of Si 1 - xCx/Si (0≤ x ≤0.014) Semiconductor Alloys"

Cited by 3 publications

References 18 publications

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCyalloys on Si (0 0 1)

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCyalloys on Si (0 0 1)

Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)

Reply to “Comment on `Optical Characterization of Si1-xCx/Si ( 0≤x ≤0.014) Semiconductor Alloys' ”

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Comment on “Optical Characterization of Si_{1 - x}C_x/Si (0≤ x ≤0.014) Semiconductor Alloys"

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si_1−yC_yalloys on Si (0 0 1)

Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si_1−yC_yalloys on Si (0 0 1)

Reply to “Comment on `Optical Characterization of Si_1-xC_x/Si ( 0≤x ≤0.014) Semiconductor Alloys' ”