2008
DOI: 10.1103/physrevlett.101.139501
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Comment on “Mechanism of Branching in Negative Ionization Fronts”

Abstract: When the fingers of discharge streamers emerge from a planar ionization front due to a Laplacian instability, their initial spacing is determined by the band of unstable transversal Fourier perturbations and generically dominated by the fastest growing modes. The Letter [1] therefore aims to calculate the temporal growth rate sðkÞ of modes with wave number k, when the electric field far ahead of the ionization front is E 1 . In earlier work [2][3][4], sðkÞ was determined in a pure reaction-drift model for the … Show more

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Cited by 6 publications
(4 citation statements)
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“…A (heuristic) analysis for s(k) was given in [71,72]. The asymptotes (8) confirm these results for k 1, and correct them for k 1, see also [73]. On the other hand, the analytical asymptote (8) for k 1 fits the numerical results for the dispersion relation well, while the asymptote for k 1 parametrizes the dispersion relation s(k) deep in its negative range, but not close to the band of wavenumbers of positive growth rate [64].…”
Section: Stability Of Negative Planar Ionization Fronts Withmentioning
confidence: 53%
“…A (heuristic) analysis for s(k) was given in [71,72]. The asymptotes (8) confirm these results for k 1, and correct them for k 1, see also [73]. On the other hand, the analytical asymptote (8) for k 1 fits the numerical results for the dispersion relation well, while the asymptote for k 1 parametrizes the dispersion relation s(k) deep in its negative range, but not close to the band of wavenumbers of positive growth rate [64].…”
Section: Stability Of Negative Planar Ionization Fronts Withmentioning
confidence: 53%
“…In principle, such an approach combined with proper matched asymptotic expansions could work. However, the calculation in [5] was intrinsically inconsistent [18], disagrees with our asymptotic limit for small k and therefore fits the numerical results even worse than formula (6.1), cf. Fig.…”
Section: Scales and Fits For D >mentioning
confidence: 85%
“…The solution of this problem was discussed in numerous works [4][5][6][7][8][9][10][11][12]. The most general analytical results were obtained in [12], when the stability of steady state plane impact ionization waves in reverse biased semiconductor p + -n-n + structures was ana lyzed.…”
Section: Introductionmentioning
confidence: 99%