Comment on “Atomistic Picture of Charge Density Wave Formation at Surfaces”

Shim, Hyungjoon; Yeo, Jonghoon; Lee, Geunseop; Kim, Hanchul

doi:10.1103/physrevlett.111.149601

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…This clearly shows that the oxygen impurity plays the role of a nucleation seed, which reduces the activation barrier height and expedites the nucleation kinetics [26,39,40], whereas the In impurity does not. The O-induced decrease in the barrier height of nucleation can be also confirmed by the significant increase in the transition rate of the O-adsorbed surface compared to that of the pristine surface (see figures 2(a) and (b)).…”

Section: Resultsmentioning

confidence: 94%

Homogeneous and heterogeneous nucleations in the surface phase transition: Si(111)4 × 1-In

et al. 2015

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Homogeneous and heterogeneous nucleations in a reduced-dimensional system undergoing a firstorder structural phase transition were examined by using low electron energy diffraction and scanning tunneling microscopy. The high-temperature 4 × 1 phase of a Si(111)-In surface was supercooled at temperatures below the transition temperature (T c ) and evolved slowly into a low-temperature 8 × 2 phase with time. The transition rate decreased significantly as the temperature approached T c . The kinetics of the observed homogeneous nucleation was analyzed by classical nucleation theory. The introduction of oxygen atoms reduced the hysteresis and accelerated nucleation significantly, showing that the T c -raising oxygen impurity plays the role of a nucleation seed for heterogeneous nucleation.

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Section: Resultsmentioning

confidence: 94%

Homogeneous and heterogeneous nucleations in the surface phase transition: Si(111)4 × 1-In

et al. 2015

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“…Moreover, it was shown that single oxygen defects also induce a structural phase transition in the adjacent defect-free In chain [17]. How the impurities feed back in detail to the phase transition is unknown and under current debate [13,18,19].…”

Section: Introductionmentioning

confidence: 99%

Interwire coupling forIn(4×1)/Si(111) probed by surface transport

et al. 2015

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The In/Si(111) system reveals an anisotropy in the electrical conductivity and is a prototype system for atomic wires on surfaces. We use this system to study and tune the interwire interaction by adsorption of oxygen. Through rotational square four-tip transport measurements, both the parallel (σ || ) and perpendicular (σ ⊥ ) components are measured separately. The analysis of the I(V) curves reveals that σ ⊥ is also affected by adsorption of oxygen, showing clearly an effective interwire coupling, in agreement with density-functional-theory-based calculations of the transmittance. In addition to these surface-state mediated transport channels, we confirm the existence of conducting parasitic space-charge layer channels and address the importance of substrate steps by performing the transport measurements of In phases grown on Si(111) mesa structures.

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