2016
DOI: 10.1039/c6nr04375e
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Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters

Abstract: Surface plasmon coupling with light-emitters and surface nano-patterning have widely been used separately to improve low efficiency InGaN light-emitting diodes. We demonstrate a method where dielectric nano-patterning and Ag nanoparticles (NPs) are combined to provide both light extraction and internal quantum efficiency enhancement for InGaN/GaN quantum-well light-emitters. By fabricating dielectric nano-rod pattern on the GaN surface, an optical coating that improves the light extraction is obtained, and fur… Show more

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Cited by 18 publications
(17 citation statements)
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“…With advances in manufacturing processes, including the use of a low-dimensional light-emitting medium with high spontaneous emission rate [1], a plasmonic nanostructure for light extraction improvement [2] and a novel wafer-scale packaging technique [3], solid-state lighting based upon GaN-based light-emitting diodes (LEDs) has emerged as the dominant technology for indoor/outdoor illumination, horticulture/car lighting, and advertising displays. For these visible LEDs, InGaN/GaN multiple quantum wells (MQWs) grown on sapphire substrates are generally used as the active layer for light emission.…”
Section: Introductionmentioning
confidence: 99%
“…With advances in manufacturing processes, including the use of a low-dimensional light-emitting medium with high spontaneous emission rate [1], a plasmonic nanostructure for light extraction improvement [2] and a novel wafer-scale packaging technique [3], solid-state lighting based upon GaN-based light-emitting diodes (LEDs) has emerged as the dominant technology for indoor/outdoor illumination, horticulture/car lighting, and advertising displays. For these visible LEDs, InGaN/GaN multiple quantum wells (MQWs) grown on sapphire substrates are generally used as the active layer for light emission.…”
Section: Introductionmentioning
confidence: 99%
“…By virtue of their unique material properties, nanostructures of III-nitride materials have been of considerable interest for various applications including piezotronic sensing, ambient energy harvesting, nanostructurebased lighting and computing devices, etc. [1][2][3][4][5][6][7][8][9][10][11][12][13] Numerous types of nitride nanostructures have been explored via either templateassisted or template-free fabrication methodologies. [14][15][16][17] In the template-assisted strategy, material growth is carried out on sacrificial nanostructured template materials such as carbon nanotubes, polymers, or anodic aluminum oxide (AAO).…”
Section: Introductionmentioning
confidence: 99%
“…However, room for improvements remains, including the internal quantum efficiency of the active region [5,6], the light-extraction technology [7], the current-flow design [8,9], the minimization of resistive loss [10], the electrostatic discharge stability [11], and the color-rendering property via the color mixing [12,13]. Aside these improvements, it is known that, due to their importance, various stress-measured degradation tests, including thermal, electrical, static charges, and moisture, have been developed [14,15].…”
Section: Introductionmentioning
confidence: 99%