Combining structural and chemical information at the nanometer scale by correlative transmission electron microscopy and atom probe tomography

Herbig, Michael; Choi, Pyuck‐Pa; Raabe, Dierk

doi:10.1016/j.ultramic.2015.02.003

Cited by 139 publications

(89 citation statements)

References 39 publications

(48 reference statements)

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“…2d, it is marked and protected by in situ Pt deposition; see Fig. 2d-e. Figure 2f-k shows the step-by-step inplane lift-out 26,27 procedure schematically, where cut parts of the lift-out are positioned/attached on the electro-polished tips of a halved TEM Mo grid, which is held in a dedicated holder 8,28 and subsequently shaped into conical APT specimens by annular milling. 29 Figure 3a shows a bright-field TEM image of the APT specimen containing a C-type SF close to the [110] zone axis and in a g ¼ 00 2 À Á two-beam condition.…”

Section: Methods (2) Cecci-guided In-plane Target Preparation For Tem mentioning

confidence: 99%

Correlative Microscopy—Novel Methods and Their Applications to Explore 3D Chemistry and Structure of Nanoscale Lattice Defects: A Case Study in Superalloys

Makineni

Lenz

Kontis

et al. 2018

JOM

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Section: Methods (2) Cecci-guided In-plane Target Preparation For Tem mentioning

confidence: 99%

Correlative Microscopy—Novel Methods and Their Applications to Explore 3D Chemistry and Structure of Nanoscale Lattice Defects: A Case Study in Superalloys

Makineni

Lenz

Kontis

et al. 2018

JOM

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“…Electropolished Mo‐TEM grids were used as support structure. A self‐designed adapter for correlative microscopy enables us to mount these grids easily in all different microscopes involved (EBSD, FIB, TEM, and APT) . Final ion beam milling was performed at 2 kV in order to minimize the damage caused by the Ga ions.…”

Section: Methodsmentioning

confidence: 99%

“…The precise correlation requires a challenging site‐specific sample preparation. A special sample holder system was developed, which enables us to mount the samples in all the involved microscopes (scanning electron microscope (SEM), focused ion beam (FIB), transmission electron microscope (TEM), EBSD, EBIC, and APT) without changing the retainer and thus facilitates the sample preparation . Therefore, a better understanding of corresponding structure‐property relationships in mc‐Si solar cells is expected, by coupling the local chemistry with the GB type and electrical activity.…”

Section: Introductionmentioning

confidence: 99%

Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography

Stoffers

Cojocaru‐Mirédin

Seifert

et al. 2015

Progress in Photovoltaics

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This study aims to better understand the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in multicrystalline silicon. A sample of the upper part of a multicrystalline silicon ingot with intentional addition of iron and copper has been investigated. Correlative electron-beam-induced current, electron backscatter diffraction, and atom probe tomography data for different types of grain boundaries are presented. For a symmetric coherent Σ3 twin boundary, with very low recombination activity, no impurities are detected. In case of a noncoherent (random) high-angle grain boundary and higher order twins with pronounced recombination activity, carbon and oxygen impurities are observed to decorate the interface. Copper contamination is detected for the boundary with the highest recombination activity in this study, a random high-angle grain boundary located in the vicinity of a triple junction. The 3D atom probe tomography study presented here is the first direct atomic scale identification and quantification of impurities decorating grain boundaries in multicrystalline silicon. The observed deviations in chemical decoration and induced current could be directly linked with different crystallographic structures of silicon grain boundaries. Hence, the current work establishes a direct correlation between grain boundary structure, atomic scale segregation information, and electrical activity. It can help to identify interface-property relationships for silicon interfaces that enable grain boundary engineering in multicrystalline silicon.

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“…The lamella can then be lifted out after cutting free using a micromanipulator and can be mounted to any kind of pre-tip. This can be the posts of a Si needle pad, tips generated on a cut and electropolished transmission electron microscopy (TEM) grid [73,75,76] or a single tip. At last the final tip shape is generated using annular milling, whereby voltage and current are gradually reduced to decrease Ga contamination [77].…”

Section: Atom Probe Tomographymentioning

confidence: 99%

Advancement of Compositional and Microstructural Design of Intermetallic γ-TiAl Based Alloys Determined by Atom Probe Tomography

2016

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Advanced intermetallic alloys based on the γ-TiAl phase have become widely regarded as most promising candidates to replace heavier Ni-base superalloys as materials for high-temperature structural components, due to their facilitating properties of high creep and oxidation resistance in combination with a low density. Particularly, recently developed alloying concepts based on a β-solidification pathway, such as the so-called TNM alloy, which are already incorporated in aircraft engines, have emerged offering the advantage of being processible using near-conventional methods and the option to attain balanced mechanical properties via subsequent heat-treatment. Development trends for the improvement of alloying concepts, especially dealing with issues regarding alloying element distribution, nano-scale phase characterization, phase stability, and phase formation mechanisms demand the utilization of high-resolution techniques, mainly due to the multi-phase nature of advanced TiAl alloys. Atom probe tomography (APT) offers unique possibilities of characterizing chemical compositions with a high spatial resolution and has, therefore, been widely used in recent years with the aim of understanding the materials constitution and appearing basic phenomena on the atomic scale and applying these findings to alloy development. This review, thus, aims at summarizing scientific works regarding the application of atom probe tomography towards the understanding and further development of intermetallic TiAl alloys.

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Combining structural and chemical information at the nanometer scale by correlative transmission electron microscopy and atom probe tomography

Cited by 139 publications

References 39 publications

Correlative Microscopy—Novel Methods and Their Applications to Explore 3D Chemistry and Structure of Nanoscale Lattice Defects: A Case Study in Superalloys

Correlative Microscopy—Novel Methods and Their Applications to Explore 3D Chemistry and Structure of Nanoscale Lattice Defects: A Case Study in Superalloys

Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography

Advancement of Compositional and Microstructural Design of Intermetallic γ-TiAl Based Alloys Determined by Atom Probe Tomography

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