Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling

Frisk, Christopher; Ericson, Tove; Li, Shuyi; Szaniawski, Piotr; Olsson, Jörgen; Platzer‐Björkman, Charlotte

doi:10.1016/j.solmat.2015.09.019

Cited by 59 publications

(44 citation statements)

References 25 publications

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“…In the case of PDT(Na), L D increases with NaF thickness up to 100 nm while in the case of PAS(Na), a maximum value of almost 300 nm is found for 15 nm of NaF. These values are consistent with other publications …”

Section: Resultssupporting

confidence: 91%

Effect of Sb and Na Incorporation in Cu₂ZnSnS₄ Solar Cells

Suzon

Grenet

Emieux

et al. 2019

Physica Status Solidi (a)

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Cu2ZnSnS4‐based solar cells suffer from limited power conversion efficiency (PCE) and relative small grain size compared to selenium containing absorbers. Introduction of Na in Cu2ZnSnS4 absorbers either during the synthesis or after this step is used to improve device performances and to determine whether its effect is based on structural properties improvement (grain size enhancement, better crystallization) or on opto‐electronic properties improvement (defect passivation). In both cases, presence of Na in the absorber notably improves current and voltage of the solar cells, but the effect is more pronounced when Na is present during synthesis. Quantum efficiency analysis shows that these improvements can be related to longer minority carrier diffusion length and reduced absorber/buffer interface recombination. Introducing Na in the process mostly leads to preferential (112) orientation of the crystal which is clearly correlated with better device performances. Otherwise, the performance limitation due to small grain size is discarded by the joint use of Sb and Na, which has a significant impact on grain size but does not affect solar cells efficiency.

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Section: Resultssupporting

confidence: 91%

Effect of Sb and Na Incorporation in Cu₂ZnSnS₄ Solar Cells

Suzon

Grenet

Emieux

et al. 2019

Physica Status Solidi (a)

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“…The Al 2 O 3 rear surface passivated CZTS solar cell fabrication and characterization sequences are summarized in Table I; for more details concerning the nanostructured Al 2 O 3 passivation layer formation, the general cell processing (e.g., the CZTS absorber layer formation), and a device model of unpassivated reference CZTS solar cells, see [6], [14], and [15]. The unpassivated reference cells have the same processing sequence, but without steps 3 and 4.…”

Section: Methodsmentioning

confidence: 99%

Rear Surface Optimization of CZTS Solar Cells by Use of a Passivation Layer With Nanosized Point Openings

Vermang

Ren

Donzel‐Gargand

et al. 2016

IEEE J. Photovoltaics

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Previously, an innovative way to reduce rear interface recombination in Cu(In,Ga)(S,Se) 2 (CIGSSe) solar cells has been successfully developed. In this work, this concept is established in Cu 2 (Zn,Sn)(S,Se) 4 (CZTSSe) cells to demonstrate its potential for other thin-film technologies. Therefore, ultrathin CZTS cells with an Al 2 O 3 rear surface passivation layer having nanosized point openings are fabricated. The results indicate that introducing such a passivation layer can have a positive impact on open-circuit voltage (V O C ; +17%rel.), short-circuit current (J S C ; +5%rel.), and fill factor (FF; +9%rel.), compared with corresponding unpassivated cells. Hence, a promising efficiency improvement of 32%rel. is obtained for the rear passivated cells.

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“…In this work we use 1D SCAPS [1] models to simulate the influence of CZTS absorber layer thickness on current-voltage (J-V) characteristics and compare with an empirical data set with similar thickness variations [2]. The models are minor variations to our baseline reference device model [3], built with input parameters from a reference device presented at IEEE PVSC-41 [4]. The aim of this study is to evaluate the trends induced by changing thickness, and to predict the influence of thicknesses variation, for future reference, in the limit of bulk and back contact recombination.…”

Section: Introductionmentioning

confidence: 99%

“…A complete description of the reference model, including the semi-empirical absorption coefficient, can be found in [3].…”

Section: Introductionmentioning

confidence: 99%

CZTS solar cell device simulations with varying absorber thickness

Frisk

Ren

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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CZTS solar cell device simulation with varying absorber thickness. Abstract -In this study the influence of absorber layer thickness on the trends of the four current-voltage (J-V) parameters for our CZTS solar cells is studied with simulations and compared with empirical data. In the case of dominating interface recombination we find that open-circuit voltage and fillfactor are largely unaffected by thickness variations 0.5 -2.0 μm, whereas short-circuit current, and thereby efficiency, saturates (98 % of max) at >1.1 μm absorber thickness, in agreement with measurements. In the case of suppressed interface recombination all four J-V parameters exhibit strong thickness dependence at <0.5 μm due to back contact recombination.

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Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling

Cited by 59 publications

References 25 publications

Effect of Sb and Na Incorporation in Cu₂ZnSnS₄ Solar Cells

Effect of Sb and Na Incorporation in Cu₂ZnSnS₄ Solar Cells

Rear Surface Optimization of CZTS Solar Cells by Use of a Passivation Layer With Nanosized Point Openings

CZTS solar cell device simulations with varying absorber thickness

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Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling

Cited by 59 publications

References 25 publications

Effect of Sb and Na Incorporation in Cu2ZnSnS4 Solar Cells

Effect of Sb and Na Incorporation in Cu2ZnSnS4 Solar Cells

Rear Surface Optimization of CZTS Solar Cells by Use of a Passivation Layer With Nanosized Point Openings

CZTS solar cell device simulations with varying absorber thickness

Contact Info

Product

Resources

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Effect of Sb and Na Incorporation in Cu₂ZnSnS₄ Solar Cells

Effect of Sb and Na Incorporation in Cu₂ZnSnS₄ Solar Cells