Combining lithography and etch models in OPC modeling

Zavyalova, Lena; Luan, Lan; Song, Hua; Schmoeller, Thomas; Shiely, James P.

doi:10.1117/12.2049003

Cited by 6 publications

(2 citation statements)

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“…Then, an etch model E takes a resist pattern and X and outputs an etched wafer pattern D: E(X)=D. 6 The etch bias (difference between the developed resist and etched edge positions) is a function of the visible open area (to be etched), degree to which the feature view is blocked and the density of material to be etched (loading).…”

Section: Kernels and Model Based Approaches Accounting For Etchmentioning

confidence: 99%

“…Each plasma etch step required its own set of inputs from plasma equipment simulations (inductively coupled plasmas) each with distinct plasma chemistries. Executing these kind of simulation suites 19 in-line with a simulation tasked with moving photomask edges 5,6 was clearly not practical even with some advances incorporating compact models. 15 A more modest approach was to evaluate through-pitch structures and create rules for edge placement based on insights from simulation results.…”

Section: Integration Modeling and Rule Generationmentioning

confidence: 99%

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Etch aware computational patterning in the era of atomic precision processing

Ventzek

Shinagawa

Ranjan

2019

Advanced Etch Technology for Nanopatterning VIII

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Etch processes have always involved inherent process trade-offs related to fundamental plasma parameters to achieve planar patterning metrics related to damage, aspect ratio dependences and profile. Today, we are in a new era of "area selective etch." Advanced patterning (SAXP, (LELE) n), logic, memory and interconnect applications beyond 3 nm involve, in one way or another, topographies that require etch "control" at every surface. Achieving profile specifications will require the ability to conjure isotropy control at will. Vehicles to achieving this include novel precursors and hybrid processes involving combinations of deposition and plasma etch as we know it. Ultimately, to differentiate surfaces comprising silicon, silicon oxides and nitrides, and organics require active modification at the first surface reactive monolayer to be able to differentiate them in each process step with respect to any surface normal on the wafer plane. This presentation will start with a review of today's state-of-the-art means for atomic precision processing of surfaces. A simulation science perspective to process integration modeling introduces methods for surface chemistry control that lend themselves to achieving area selective etch. In the end, surface chemistry control is not a cure-all. Finally, a combination of plasma diagnostics and simulation will be needed to assist plasma process controls for scaling at 3 nm and beyond.

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Section: Kernels and Model Based Approaches Accounting For Etchmentioning

confidence: 99%