2015
DOI: 10.1039/c5tc03134f
|View full text |Cite
|
Sign up to set email alerts
|

Combined experimental–theoretical study of the optoelectronic properties of non-stoichiometric pyrochlore bismuth titanate

Abstract: A combination of experimental and computational methods was applied to investigate the crystal structure and optoelectronic properties of the non-stoichiometric pyrochlore Bi2−xTi2O7−1.5x.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

3
40
0

Year Published

2016
2016
2021
2021

Publication Types

Select...
8

Relationship

5
3

Authors

Journals

citations
Cited by 32 publications
(43 citation statements)
references
References 44 publications
3
40
0
Order By: Relevance
“…[7][8][9][10] Our choice of HSE06 was based on the previous reports of the widely used semiconductors in the fields of photocatalysis and photovoltaics, which showed high accuracy in predicting these photophysical properties compared with experimental data. [7][8][9][10][34][35][36] This result is distinctive from the small band gaps that were calculated using the standard PBE functional. 30,31,37 We emphasize here that our highly accurate characterization of these bismuth titanate compounds indicates that this material has remarkable photophysical properties, making it a promising material to be used in optoelectronic devices.…”
Section: Introductionmentioning
confidence: 81%
See 1 more Smart Citation
“…[7][8][9][10] Our choice of HSE06 was based on the previous reports of the widely used semiconductors in the fields of photocatalysis and photovoltaics, which showed high accuracy in predicting these photophysical properties compared with experimental data. [7][8][9][10][34][35][36] This result is distinctive from the small band gaps that were calculated using the standard PBE functional. 30,31,37 We emphasize here that our highly accurate characterization of these bismuth titanate compounds indicates that this material has remarkable photophysical properties, making it a promising material to be used in optoelectronic devices.…”
Section: Introductionmentioning
confidence: 81%
“…34 The consistency between the measured and calculated properties for this material encouraged us to apply this methodology to other bismuth titanate structures.…”
Section: Introductionmentioning
confidence: 99%
“…The calculations were carried out using the Heyd-Scuseria-Ernzerhof (HSE06) functional, 35,36 which is well documented to give more accurate band gap values of semiconductors than standard GGA 24,[37][38][39] The spin-orbit-coupling (SOC) effect on the band gap was also taken into account by including relativistic effects on Bi. The 5d-electrons on Bi were not considered as valence electrons in Bi because they would not change the band gap and DOS characteristics as recently reported in the literature.…”
Section: Computational Detailsmentioning
confidence: 99%
“…[ [50][51][52][74][75][76][77][78][79][80] However, our main focus on this study was to show the trend rather (relative difference) rather than giving absolute numbers. A systematic computational investigation of the impact of relevant self-intrinsic defects on the optoelectronic properties of BiVO4 at the HSE06 level of theory is indeed under progress and will be reported soon.…”
mentioning
confidence: 99%