1993
DOI: 10.1007/bf00321422
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Combined bulk and surface analysis of oxygen species in Si3N4 powders by means of carrier-gas heat-extraction methods and Auger electron spectrometry

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Cited by 9 publications
(9 citation statements)
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“…After the infiltration of the slurry, the mold was heated at 80°C for 24 h. The dried specimens were subsequently de-molded and heated to 1700°C for 2 h in Ar to remove surface SiO 2 from the filler. The oxygen content of the heat-treated SiC was analyzed by hot gas extraction using a TC436DR (Leco) [28].…”
Section: Methodsmentioning
confidence: 99%
“…After the infiltration of the slurry, the mold was heated at 80°C for 24 h. The dried specimens were subsequently de-molded and heated to 1700°C for 2 h in Ar to remove surface SiO 2 from the filler. The oxygen content of the heat-treated SiC was analyzed by hot gas extraction using a TC436DR (Leco) [28].…”
Section: Methodsmentioning
confidence: 99%
“…13 The amount of oxygen that is bound in surface oxides (SiO x ) and in the core was analyzed further using modified CGHE. Figure 1 shows a CGHE evologramme of the as-received powder.…”
Section: (1) Oxygen Distribution On the Powder Surfacementioning
confidence: 99%
“…The oxygen content decreased after the treatment at 1300°C, which behavior became more distinct in the 1750‐sample. However, some oxygen remained even after the treatment at 1750°C, indicating the presence of oxygen inside the powder 10 . The bulk density of the pellets decreased with increasing heat‐treatment temperature due to the enhancement of the decomposition reactions described above.…”
Section: Resultsmentioning
confidence: 99%
“…However, some oxygen remained even after the treatment at 17501C, indicating the presence of oxygen inside the powder. 10 The bulk density of the pellets decreased with increasing heat-treatment temperature due to the enhancement of the decomposition reactions described above. The carbon content in the pellets increased when the protective Si 3 N 4 powder bed was not applied during the heat treatment in N 2 , indicating the formation of SiC and the deposition of graphite.…”
Section: Methodsmentioning
confidence: 99%