Combined assessment of piezoelectric AlN films using X-ray diffraction, infrared absorption and atomic force microscopy

Olivares, J.; González-Castilla, S.; Clément, M.; Sanz‐Hervás, A.; Vergara, L.; Sangrador, J.; Iborra, E.

doi:10.1016/j.diamond.2006.11.065

Cited by 45 publications

(40 citation statements)

References 11 publications

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“…different amounts of grains oriented in the (10-1), (10-2), and (10-3) directions. It is important to remember that the intensity of the (10-1), (10-2), and (10-3) reflections is not directly related to the real amount of grains with those orientations; their low intensity can be explained by the strict geometrical condition imposed by the type of XRD experiment carried out (0/20 scan) [10]. Indeed, whereas reflections with the {00-2} planes are observed regardless of the basal orientation of the (00-2)-oriented grains, only specific basal orientations of the tilted grains give {10-1}, {10-2}, or {10-3} planes parallel to the surface.…”

Section: Structural and Piezoelectric Characterization Of Aln Filmsmentioning

confidence: 99%

“…All of the details for AIN characterization are described in a previous work [10]. BAW resonators were characterized by measuring the electrical reflection coefficient (Sn) at frequencies ranging from 100 kHz to 3 GHz, using a network analyzer (PNA N5230A, Agilent Technologies Inc., Santa Clara, CA) connected to the samples through a Picoprobe coplanar RF probe (GBB Industries Inc., Naples, FL).…”

Section: Experimental Techniquesmentioning

confidence: 99%

“…Digital Object Identifier 10.1109/TUFFC.2012.2163 electric response [10]. Additionally, highly c-axis-textured films with poor piezoelectric activity containing grains with opposite polar orientations have also been reported [11].…”

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confidence: 99%

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Influence of crystal quality on the excitation and propagation of surface and bulk acoustic waves in polycrystalline AlN films

Clément¹,

Olivares

Capilla

et al. 2012

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Abstract-Weinvestigate the excitation and propagation of acoustic waves in polycrystalline aluminum nitride films along the directions parallel and normal to the c-axis. Longitudinal and transverse propagations are assessed through the frequency response of surface acoustic wave and bulk acoustic wave devices fabricated on films of different crystal qualities. The crystalline properties significantly affect the electromechanical coupling factors and acoustic properties of the piezoelectric layers. The presence of misoriented grains produces an overall decrease of the piezoelectric activity, degrading more severely the excitation and propagation of waves traveling transversally to the c-axis. It is suggested that the presence of such crystalline defects in c-axis-oriented films reduces the mechanical coherence between grains and hinders the transverse deformation of the film when the electric field is applied parallel to the surface.

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Section: Structural and Piezoelectric Characterization Of Aln Filmsmentioning

confidence: 99%

Section: Experimental Techniquesmentioning

confidence: 99%

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Influence of crystal quality on the excitation and propagation of surface and bulk acoustic waves in polycrystalline AlN films

Clément¹,

Olivares

Capilla

et al. 2012

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…Cleaned substrates were dried by blowing N 2 gas.After the cleaned Si substrates were loaded, the chamber was pump down into high vacuum state of 4.05×10 -5 mbar with turbo molecular pump backed by a rotary pump. High pure argon (Ar) gas (99.999 %) and nitrogen (N 2 ) gas (99.999 %) were used as sputtering and reactive gas and flowed into the chamber with gas ratio of Ar 7: N 2 13. 100W DC and 50W RF discharge power were applied with chamber pressure maintained at 9.33×10 -3 mbar.…”

Section: Xrd Analysismentioning

confidence: 99%

“…), a direct band gap (E g = 5.9-6.2 eV), high level of hardness (2 x 10 3 kgf/mm 2 ), high fusion temperature (2400 °C) and a high acoustic velocity [1]- [2]. Aluminium nitride has also proven to be a very interesting electronic material in MOS technology.…”

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confidence: 99%

Annealing Effect of DC-RF Coupled Co-sputtered Boron-Aluminium Nitride Thin Films

Y¹,

Shanmugan²,

Devarajan³

2014

IJETT

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-Boron (B) doped Aluminium Nitride (AlN) thin film ((B, Al)N) was synthesized by DC-RF coupled co-sputtering and post processed for three different annealing temperatures. The structural properties was studied by X-ray spectra and observed the mixture of cubic BN and hexagonal AlN when annealed up to 300 °C. Increased crystallite size showed the influence of both B doping as well as annealing temperature on crystallite properties of (B, Al)N. Compressive and tensile stress was noticed with all samples and observed high value for cubic BN phase at 300 °C. Dislocation density and strain were also changed by the influence of B doping at high temperatures (> 200 °C). AFM images were showed the rough surface of B doped AlN thin film at 400 °C than other temperatures. The FESEM images revealed the particle agglomeration during B doping into AlN at high annealing temperatures. Elemental composition analysis by EDS spectra were also evidenced the change in surface structure as the effect of annealing.

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Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films

Reusch

Kurz

et al. 2017

Physica Status Solidi (a)

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Reactive pulsed DC magnetron co‐sputtering is used to grow piezoelectric aluminum nitride (AlN) and aluminum scandium nitride (AlScN) thin films on Si(001) substrates. By using grazing incidence X‐ray diffraction (GIXRD), scanning electron microscopy (SEM), and piezoresponse force microscopy (PFM), we investigate how the microstructure and the presence of misoriented grains affect the piezoelectric properties of the material. N2 concentration and target‐to‐substrate distance are finely tuned to achieve thin films without misoriented grains, resulting in Al0.87Sc0.13N thin films with low roughness, high degree of c‐axis orientation, homogenous polarity, and piezoelectric coefficient d33 = −12.3 pC/N.

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Combined assessment of piezoelectric AlN films using X-ray diffraction, infrared absorption and atomic force microscopy

Cited by 45 publications

References 11 publications

Influence of crystal quality on the excitation and propagation of surface and bulk acoustic waves in polycrystalline AlN films

Influence of crystal quality on the excitation and propagation of surface and bulk acoustic waves in polycrystalline AlN films

Annealing Effect of DC-RF Coupled Co-sputtered Boron-Aluminium Nitride Thin Films

Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films

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