Combined altitude and underground real-time SER characterization of CMOS technologies on the ASTEP-LSM platform

Autran, Jean‐Luc; Roché, Philippe; Sauze, S.; Gasiot, Gilles; Munteanu, Daniéla; Loaiza, P.; Zampaolo, M.; Borel, J.; Rozov, S.; Yakushev, E.

doi:10.1109/icicdt.2009.5166277

Cited by 5 publications

(6 citation statements)

References 22 publications

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“…Most of MCU multiplicity, the number of bit flips in same MCU occurrence, concerns 2 and 3 contacts respectively. So, the simulation confirms that the MCU due to alpha emitters is not significant in the 130 nm SRAM technology in accordance with Real-time underground experiment [6], [7]. Contrary to the case of the neutron (in altitude or ground level) or heavy ion with directly impact on several SRAM, the energy deposition of the alpha emitter is relatively low and only track near contacts induced a SEU which explained the absence of MCU formation in ground level.…”

Section: Monte-carlo Simulation Of the -Sersupporting

confidence: 81%

“…It is well known that MCU formation due to only alpha-emitters [6], [7] (Multi Cell Upset) in the 130 nm SRAM technology is not detected experimentally. But in our simulation several cases statistically appear; this represents less than 3 % of the total bit flip and 1% of the total event.…”

Section: Monte-carlo Simulation Of the -Sermentioning

confidence: 99%

“…If we consider a gas flow type detector with a 2 MeV threshold located just in front of the top face, our simulation shows that 13% of the total amount of particles generated in the bulk layer escapes from the silicon layer. The alpha-particle layer emissivity can thus be expressed as (in /cm /h): (6) where (cm .h) is the activity of 1 ppb of U in silicon, the factor n is equal to the number of alpha-emitters of the disintegration chain at secular equilibrium, EP correspond to the percentage of escaping particle equal to 13% and m is the silicon thickness. In this case, we obtain an alpha-particle emission rate of /cm /h, in excellent agreement with [10] (where for 90 ppt the emissivity is equal to /cm /h).…”

Section: B Materials Levelmentioning

confidence: 99%

“…From a characterization point-of-view, the objective is to quantify the exact role played by alpha emitters in the global Soft-Error Rate (SER) of ICs, in addition to the contribution of the radiation environment. At ground or atmospheric levels, it is therefore important to separate this -SER from atmospheric neutron-induced SER [6]: to do this, real-time SER experiments performed underground offers a unique solution to accurately characterize -SER by detecting the (rare) SEU events directly inside ICs [6], [7]. The present paper reports on the modeling and simulation of the alpha-particle induced soft-error rate in 130 nm SRAMs as well as the experimental underground characterization of these circuits conducted, during more than two years, at the underground laboratory of Modane (LSM).…”

Section: Introductionmentioning

confidence: 99%

“…Details regarding the LSM as well as the setup and the 130 nm SRAM chip used to perform this -SER characterization can be found in[6],[7].Table I summarizesthe key-values for this experiment.…”

mentioning

confidence: 99%

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Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM

Martinie

Autran

Uznanski

et al. 2011

IEEE Trans. Nucl. Sci.

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2010 Conference on Radiation and its Effects on Components and Systems (RADECS), Langenfeld, GERMANY, SEP 20-24, 2010International audienceWe report the modeling and simulation of the soft-error rate (SER) in CMOS 130 nm SRAM induced by alpha-particle emission in silicon due to uranium contamination at ppb concentration levels. Monte-Carlo simulation results have been confronted to experimental data obtained from long-duration (>20 000 h) real-time measurements performed at the under-ground laboratory of Modane (LSM) and from experimental counting characterization using an ultra low background alpha-particle gas proportional counter. The calibration of simulations with the measured SER allowed us to determine a U-238 contamination level of 0.37 ppb (considered at secular equilibrium) in very good agreement with both corresponding alpha-particle emissivity levels measured and simulated at wafer-level in the range 1.1 to 2.3 x 10(-3) alpha/cm(2)/h

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Section: Monte-carlo Simulation Of the -Sersupporting

confidence: 81%

Section: Monte-carlo Simulation Of the -Sermentioning

confidence: 99%

Section: B Materials Levelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM

Martinie

Autran

Uznanski

et al. 2011

IEEE Trans. Nucl. Sci.

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Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Moindjie

Autran

Munteanu

et al. 2017

Microelectronics Reliability

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Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERs, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65nm and 40nm SRAMs.

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