Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

Oh, Byeong Yun; Park, Jae-Cheol; Lee, Young-Jun; Cha, Sangjun; Kim, Do Kyung; Kim, Kwang-Young; Kim, Tae−Won; Heo, Gi-Seok

doi:10.1016/j.jssc.2011.07.024

Cited by 13 publications

(10 citation statements)

References 18 publications

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“…One of the strengths of the approach is that it provides versatile access to a wide range of elemental compositions, hence new semiconductors. Doping of mixed metal oxides by are variety of elements, including alkaline earths, − rare earth, , and main group, − as well as transition metals, ,,− has been reported previously. A very important figure of merit for these mixed metal oxide semiconductors is the electronic stability of the material, which in turn equates to a lifetime of the TFT device.…”

Section: Introductionmentioning

confidence: 67%

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

et al. 2014

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Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium.

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Section: Introductionmentioning

confidence: 67%

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

et al. 2014

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“…Nomura et al first introduced gallium into IZO, which has subsequently been shown to promote amorphicity, thereby eliminating grain boundaries, controlling carrier concentration, and increasing resistance to various instabilities by reducing the film metal hydroxide (M–OH) and oxygen vacancy content. Subsequently, numerous other “oxygen getters” have been investigated; that is, metal ions which have a strong oxygen affinity, including Ti 4+ , W 6+ , Gd 3+ , Sr 2+ , Si 4+ , Zr 4+ , Hf 4+ , Sc 3+ , Y 3+ , and La 3+ …”

Section: Introductionmentioning

confidence: 99%

Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors

Hennek¹,

Smith²,

Yan³

et al. 2013

J. Am. Chem. Soc.

180

177

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In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal ion ("oxygen getter"), X, functions to control O vacancies and enhance lattice formation, hence tune carrier concentration and transport properties. Here we systematically study, in the IXZO series, the role of X = Ga(3+) versus the progression X = Sc(3+) → Y(3+) → La(3+), having similar chemical characteristics but increasing ionic radii. IXZO films are prepared from solution over broad composition ranges for the first time via low-temperature combustion synthesis. The films are characterized via thermal analysis of the precursor solutions, grazing incidence angle X-ray diffraction (GIAXRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging. Excellent thin-film transistor (TFT) performance is achieved for all X, with optimal compositions after 300 °C processing exhibiting electron mobilities of 5.4, 2.6, 2.4, and 1.8 cm(2) V(-1) s(-1) for Ga(3+), Sc(3+), Y(3+), and La(3+), respectively, and with I(on)/I(off) = 10(7)-10(8). Analysis of the IXZO TFT positive bias stress response shows X = Ga(3+) to be superior with mobilities (μ) retaining >95% of the prestress values and threshold voltage shifts (ΔV(T)) of <1.6 V, versus <85% μ retention and ΔV(T) ≈ 20 V for the other trivalent ions. Detailed microstructural analysis indicates that Ga(3+) most effectively promotes oxide lattice formation. We conclude that the metal oxide lattice formation enthalpy (ΔH(L)) and metal ionic radius are the best predictors of IXZO oxygen getter efficacy.

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“… 17–19 Heo et al demonstrated that W doped into indium zinc oxide (IZO) can greatly combine with oxygen, which raises the stability of TFTs effectively. 20,21 Thus, the stability of ZTO TFTs may be effectively improved by incorporating W into ZTO. According to the Hume-Rothery rules, a dopant is able to replace a host ion if they have similar radii.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

Yang

Jiang

et al. 2018

RSC Adv.

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Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

Cited by 13 publications

References 18 publications

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors

Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

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